Strain and piezoelectric effects on the phonon frequencies in heterostructures

Anastassakis, E

dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:09:04Z
dc.date.available	2014-03-01T01:09:04Z
dc.date.issued	1992	en
dc.identifier.issn	0038-1098	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10820
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0026940962&partnerID=40&md5=bc51702d3062e900401c961c1e4f544f	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Phonons	en
dc.subject.other	Piezoelectricity	en
dc.subject.other	Raman scattering	en
dc.subject.other	Strain	en
dc.subject.other	Phonon deformation potentials	en
dc.subject.other	Phonon frequency shifts	en
dc.subject.other	Piezoelectric fields	en
dc.subject.other	Heterojunctions	en
dc.title	Strain and piezoelectric effects on the phonon frequencies in heterostructures	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1992	en
heal.abstract	It is shown that the strain characterization of heterostructures based on phonon frequency shifts is modified when piezoelectric fields are present. The well-known phenomenological theory and Raman practice for obtaining the strain phonon deformation potentials, i.e., parameters connecting frequency shifts with strains, are extended to include electric-field phonon deformation potentials. Both sets of deformation potentials can be obtained from combined Raman experiments under hydrostatic pressure, performed on strained layers grown along [001], [110], and [111]. Expressions are given for the frequency shifts in terms of the deformation potentials, for all scattering configurations allowed by selection rules. © 1992.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid State Communications	en
dc.identifier.isi	ISI:A1992JT05900012	en
dc.identifier.volume	84	en
dc.identifier.issue	1-2	en
dc.identifier.spage	47	en
dc.identifier.epage	50	en