Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K

Misiakos, K; Tsamakis, D

dc.contributor.author	Misiakos, K	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T01:09:17Z
dc.date.available	2014-03-01T01:09:17Z
dc.date.issued	1993	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10874
dc.subject.classification	Physics, Applied	en
dc.title	Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.354551	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.354551	en
heal.language	English	en
heal.publicationDate	1993	en
heal.abstract	The intrinsic carrier density in silicon has been measured by a novel technique based on low-frequency capacitance measurements of a p+-i-n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of n(i) was found to be (9.7 +/- 0.1) X 10(9) cm-3.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.354551	en
dc.identifier.isi	ISI:A1993LV39100047	en
dc.identifier.volume	74	en
dc.identifier.issue	5	en
dc.identifier.spage	3293	en
dc.identifier.epage	3297	en