Cadmium chalcogenide semiconducting thin films prepared by electrodeposition from boiling aqueous electrolytes

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dc.contributor.author Loizos, Z en
dc.contributor.author Mitsis, A en
dc.contributor.author Spyrellis, N en
dc.contributor.author Froment, M en
dc.contributor.author Maurin, G en
dc.date.accessioned 2014-03-01T01:09:19Z
dc.date.available 2014-03-01T01:09:19Z
dc.date.issued 1993 en
dc.identifier.issn 0040-6090 en
dc.identifier.uri http://hdl.handle.net/123456789/10898
dc.subject Thin Film en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Materials Science, Coatings & Films en
dc.subject.classification Physics, Applied en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other CDSE en
dc.subject.other CELLS en
dc.subject.other EFFICIENCY en
dc.subject.other CDTE en
dc.title Cadmium chalcogenide semiconducting thin films prepared by electrodeposition from boiling aqueous electrolytes en
heal.type journalArticle en
heal.identifier.primary 10.1016/0040-6090(93)90242-H en
heal.identifier.secondary http://dx.doi.org/10.1016/0040-6090(93)90242-H en
heal.language English en
heal.publicationDate 1993 en
heal.abstract Thin n-type semiconductive films of CdTe, CdSe and their mixed compounds CdSexTe1-x, suitable for solar energy conversion, were prepared by catholic electrodeposition from an aqueous electrolyte onto titanium electrodes. An electrochemical cell was specially designed to perform electrodeposition in a boiling bath. The composition of the layers, their crystals structure, morphology and band-gap width were studied as functions of the electrochemical parameters and bath concentration. It is shown that the use of a high temperature improves the crystal quality of cadmium chalcogenide thin films even with solutions rather concentrated in selenous acid. CdSe or Se-rich CdSexTe1-x, layers tend in many cases to crystallize in the hexagonal (wurtzite) structure. © 1993. en
heal.journalName Thin Solid Films en
dc.identifier.doi 10.1016/0040-6090(93)90242-H en
dc.identifier.isi ISI:A1993MG45700014 en
dc.identifier.volume 235 en
dc.identifier.issue 1-2 en
dc.identifier.spage 51 en
dc.identifier.epage 56 en

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