Electronic structure and band - gap study of Si1-xCx

Xanthakis, JP

dc.contributor.author	Xanthakis, JP	en
dc.date.accessioned	2014-03-01T01:09:23Z
dc.date.available	2014-03-01T01:09:23Z
dc.date.issued	1993	en
dc.identifier.issn	0022-3093	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/10948
dc.subject	Band Gap	en
dc.subject	Electronic Structure	en
dc.subject.classification	Materials Science, Ceramics	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.other	Band structure	en
dc.subject.other	Electronic properties	en
dc.subject.other	Silicon carbide	en
dc.subject.other	Solid state physics	en
dc.subject.other	Band gap	en
dc.subject.other	Chemical order	en
dc.subject.other	Electronic structure	en
dc.subject.other	Low hydrogenation limit	en
dc.subject.other	Amorphous materials	en
dc.title	Electronic structure and band - gap study of Si1-xCx	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0022-3093(93)91171-X	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0022-3093(93)91171-X	en
heal.language	English	en
heal.publicationDate	1993	en
heal.abstract	The electronic structure of Si1-xCx has been calculated, in the region x > 0.5 in terms of x, the ratio of sp2 sites a and the short-range order parameters. By comparing Eg(x) to the experimental gaps we deduce that in the low hydrogenation limit the material is close to chemical order and that for high a, Eg (x) displays a hump, whereas at low a it is monotonic. © 1993.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Journal of Non-Crystalline Solids	en
dc.identifier.doi	10.1016/0022-3093(93)91171-X	en
dc.identifier.isi	ISI:A1993MT78200090	en
dc.identifier.volume	164-166	en
dc.identifier.issue	PART 2	en
dc.identifier.spage	1019	en
dc.identifier.epage	1022	en