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Influence of heat treatment on structure and properties of electrodeposited CdSe of Cd(Te, Se) semiconducting coatings

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dc.contributor.author Bouroushian, M en
dc.contributor.author Loizos, Z en
dc.contributor.author Spyrellis, N en
dc.contributor.author Maurin, G en
dc.date.accessioned 2014-03-01T01:09:25Z
dc.date.available 2014-03-01T01:09:25Z
dc.date.issued 1993 en
dc.identifier.issn 0040-6090 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/10976
dc.subject Heat Treatment en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Materials Science, Coatings & Films en
dc.subject.classification Physics, Applied en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other Cadmium compounds en
dc.subject.other Crystal structure en
dc.subject.other Electric properties en
dc.subject.other Heat treatment en
dc.subject.other Intermetallics en
dc.subject.other Physical properties en
dc.subject.other Semiconducting films en
dc.subject.other Cadmium selenide en
dc.subject.other Electrodeposited coatings en
dc.subject.other Semiconducting properties en
dc.subject.other Coatings en
dc.title Influence of heat treatment on structure and properties of electrodeposited CdSe of Cd(Te, Se) semiconducting coatings en
heal.type journalArticle en
heal.identifier.primary 10.1016/0040-6090(93)90415-L en
heal.identifier.secondary http://dx.doi.org/10.1016/0040-6090(93)90415-L en
heal.language English en
heal.publicationDate 1993 en
heal.abstract CdSe and mixed CdSe and CdTe semiconducting thin films, prepared by cathodic electrodeposition from an acid sulphate solution, containing selenium and tellurium oxides in Various amounts, were submitted to a to a thermal treatment at temperatures ranging between 400 and 520 °C. The crystal structure, composition, band-gap width and photoelectrochemical response of the annealed materials was investigated. It was found that all materials, rich in selenium, change their structure from cubic (zinc blende) to hexagonal (wurtzite), when annealed within the above mentioned region of temperatures. In many cases, an improvement of their semiconducting properties has been also confirmed. © 1993. en
heal.publisher ELSEVIER SCIENCE SA LAUSANNE en
heal.journalName Thin Solid Films en
dc.identifier.doi 10.1016/0040-6090(93)90415-L en
dc.identifier.isi ISI:A1993LJ79700019 en
dc.identifier.volume 229 en
dc.identifier.issue 1 en
dc.identifier.spage 101 en
dc.identifier.epage 106 en


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