R-MOSFET structure based on current division

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dc.contributor.author Vavelidis, K en
dc.contributor.author Tsividis, Y en
dc.date.accessioned 2014-03-01T01:09:31Z
dc.date.available 2014-03-01T01:09:31Z
dc.date.issued 1993 en
dc.identifier.issn 0013-5194 en
dc.identifier.uri http://hdl.handle.net/123456789/11056
dc.relation.uri http://www.scopus.com/inward/record.url?eid=2-s2.0-0027580619&partnerID=40&md5=6ca23bced78ce74dd0b677a4b098c0a3 en
dc.subject FILTERS en
dc.subject MOSFETS en
dc.subject.classification Engineering, Electrical & Electronic en
dc.subject.other Digital filters en
dc.subject.other Integrated circuits en
dc.subject.other Resistors en
dc.subject.other Semiconductor device structures en
dc.subject.other Tuning en
dc.subject.other Current division en
dc.subject.other Integrated continuous time filters en
dc.subject.other Parallel path combination en
dc.subject.other R MOSFET structure en
dc.subject.other MOSFET devices en
dc.title R-MOSFET structure based on current division en
heal.type journalArticle en
heal.language English en
heal.publicationDate 1993 en
heal.abstract A parallel-path combination of resistors and MOSFETs is proposed for use in integrated continuous-time filters and other circuits. The technique allows continuous incremental tuning while maintaining significantly better linearity than MOSFET-only structures. en
heal.publisher IEE-INST ELEC ENG en
heal.journalName Electronics Letters en
dc.identifier.isi ISI:A1993LN17600003 en
dc.identifier.volume 29 en
dc.identifier.issue 9 en
dc.identifier.spage 732 en
dc.identifier.epage 733 en

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