R-MOSFET structure based on current division

Vavelidis, K; Tsividis, Y

dc.contributor.author	Vavelidis, K	en
dc.contributor.author	Tsividis, Y	en
dc.date.accessioned	2014-03-01T01:09:31Z
dc.date.available	2014-03-01T01:09:31Z
dc.date.issued	1993	en
dc.identifier.issn	0013-5194	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/11056
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0027580619&partnerID=40&md5=6ca23bced78ce74dd0b677a4b098c0a3	en
dc.subject	INTEGRATED CIRCUITS	en
dc.subject	FILTERS	en
dc.subject	MOSFETS	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.other	Digital filters	en
dc.subject.other	Integrated circuits	en
dc.subject.other	Resistors	en
dc.subject.other	Semiconductor device structures	en
dc.subject.other	Tuning	en
dc.subject.other	Current division	en
dc.subject.other	Integrated continuous time filters	en
dc.subject.other	Parallel path combination	en
dc.subject.other	R MOSFET structure	en
dc.subject.other	MOSFET devices	en
dc.title	R-MOSFET structure based on current division	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1993	en
heal.abstract	A parallel-path combination of resistors and MOSFETs is proposed for use in integrated continuous-time filters and other circuits. The technique allows continuous incremental tuning while maintaining significantly better linearity than MOSFET-only structures.	en
heal.publisher	IEE-INST ELEC ENG	en
heal.journalName	Electronics Letters	en
dc.identifier.isi	ISI:A1993LN17600003	en
dc.identifier.volume	29	en
dc.identifier.issue	9	en
dc.identifier.spage	732	en
dc.identifier.epage	733	en