Simulation of crosstalk in high-speed multilayer off-chip interconnections

Papaioannou, DA; Dimopoulos, KZ; Avaritsiotis, JN

dc.contributor.author	Papaioannou, DA	en
dc.contributor.author	Dimopoulos, KZ	en
dc.contributor.author	Avaritsiotis, JN	en
dc.date.accessioned	2014-03-01T01:09:32Z
dc.date.available	2014-03-01T01:09:32Z
dc.date.issued	1993	en
dc.identifier.issn	00262692	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/11065
dc.subject	High Speed	en
dc.subject.other	Computer simulation	en
dc.subject.other	Computer software	en
dc.subject.other	Crosstalk	en
dc.subject.other	Dielectric materials	en
dc.subject.other	Electric conductors	en
dc.subject.other	Electric insulators	en
dc.subject.other	Electric waveforms	en
dc.subject.other	Electromagnetic dispersion	en
dc.subject.other	Electromagnetic wave attenuation	en
dc.subject.other	Electromagnetic wave polarization	en
dc.subject.other	Interfaces (materials)	en
dc.subject.other	Mathematical models	en
dc.subject.other	Conductor to wire ground separation	en
dc.subject.other	High speed multilayer off chip interconnections	en
dc.subject.other	Integrated circuits	en
dc.title	Simulation of crosstalk in high-speed multilayer off-chip interconnections	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0026-2692(93)90020-F	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0026-2692(93)90020-F	en
heal.publicationDate	1993	en
heal.abstract	Results of simulation of the electrical performance at 1 Gbit/s of a number of different off-chip interconnection architectures are presented, with emphasis given to the dependence of crosstalk on the geometries and dielectric constants of the insulating layers, as well as on the widths and separations of the conductors. The results indicate that crosstalk may be reduced not only by using low ε{lunate}r values for the dielectrics, but also by reducing the conductor-to-wire ground separation which simultaneously neutralizes the role of the ε{lunate}r value on crosstalk and line impedance. © 1993.	en
heal.journalName	Microelectronics Journal	en
dc.identifier.doi	10.1016/0026-2692(93)90020-F	en
dc.identifier.volume	24	en
dc.identifier.issue	7	en
dc.identifier.spage	747	en
dc.identifier.epage	757	en