XRD and Raman studies of low-temperature-grown GaAs epilayers

Calamiotou, M; Raptis, YS; Anastassakis, E; Lagadas, M; Hatzopoulos, Z

dc.contributor.author	Calamiotou, M	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Anastassakis, E	en
dc.contributor.author	Lagadas, M	en
dc.contributor.author	Hatzopoulos, Z	en
dc.date.accessioned	2014-03-01T01:09:38Z
dc.date.available	2014-03-01T01:09:38Z
dc.date.issued	1993	en
dc.identifier.issn	0038-1098	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/11113
dc.subject	Low Temperature Grown	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Crystal lattices	en
dc.subject.other	Diffraction	en
dc.subject.other	Growth (materials)	en
dc.subject.other	Molecular beam epitaxy	en
dc.subject.other	Phonons	en
dc.subject.other	Raman scattering	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Substrates	en
dc.subject.other	Arsenic excess	en
dc.subject.other	Atomic layer epitaxy	en
dc.subject.other	Crystallinity	en
dc.subject.other	Epilayers	en
dc.subject.other	Misfit strains	en
dc.subject.other	Residual strains	en
dc.subject.other	Volume expansion	en
dc.subject.other	X ray diffraction	en
dc.subject.other	Semiconducting gallium arsenide	en
dc.title	XRD and Raman studies of low-temperature-grown GaAs epilayers	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0038-1098(93)90597-G	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0038-1098(93)90597-G	en
heal.language	English	en
heal.publicationDate	1993	en
heal.abstract	High resolution X-ray diffraction and Raman spectroscopy have been used to study GaAs epilayers grown on GaAs substrates by conventional molecular beam epitaxy and by atomic layer epitaxy, at growth temperatures ranging between 600 and 200-degrees-C. No scattering was observed by TO phonons, indicating high-quality crystallinity. Epilayers grown at 200-degrees-C are tetragonally strained with a relaxed lattice constant greater than that of GaAs. The level of residual strains depends on the type of growth. The LO phonon frequencies were downshifted compared to GaAs, due to volume expansion by As excess, misfit strains, and changes in the effective charge and reduced mass of the unit cell. An estimate for the As excess has been obtained for the epilayers grown at 200-degrees-C.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid State Communications	en
dc.identifier.doi	10.1016/0038-1098(93)90597-G	en
dc.identifier.isi	ISI:A1993LU13500015	en
dc.identifier.volume	87	en
dc.identifier.issue	6	en
dc.identifier.spage	563	en
dc.identifier.epage	566	en