dc.contributor.author |
Papachristoforos, A |
en |
dc.date.accessioned |
2014-03-01T01:09:58Z |
|
dc.date.available |
2014-03-01T01:09:58Z |
|
dc.date.issued |
1994 |
en |
dc.identifier.issn |
1350-2417 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/11271 |
|
dc.subject |
MICROWAVE INTERCONNECTIONS |
en |
dc.subject |
PACKAGING |
en |
dc.subject |
PRINTED CIRCUIT BOARDS |
en |
dc.subject |
TRANSMISSION LINES |
en |
dc.subject.classification |
Engineering, Electrical & Electronic |
en |
dc.subject.classification |
Telecommunications |
en |
dc.subject.other |
Capacitance measurement |
en |
dc.subject.other |
Crosstalk |
en |
dc.subject.other |
Electric conductors |
en |
dc.subject.other |
Electronics packaging |
en |
dc.subject.other |
Finite difference method |
en |
dc.subject.other |
Inductance measurement |
en |
dc.subject.other |
Printed circuit boards |
en |
dc.subject.other |
Semiconductor device structures |
en |
dc.subject.other |
Signal distortion |
en |
dc.subject.other |
Finite thickness |
en |
dc.subject.other |
Method of lines |
en |
dc.subject.other |
Microwave interconnections |
en |
dc.subject.other |
Planar conductors |
en |
dc.subject.other |
Electric wiring |
en |
dc.title |
Method of lines for analysis of planar conductors with finite thickness |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1049/ip-map:19941116 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1049/ip-map:19941116 |
en |
heal.language |
English |
en |
heal.publicationDate |
1994 |
en |
heal.abstract |
The semianalytical method of lines is used for the calculation of capacitances and inductances of parallel transmission lines of finite thickness. The potential function is discretized in one direction (x-co-ordinate) and the first and second derivatives are substituted with their finite difference expressions. This method does not have a convergence problem because of the singular behaviour of the fields at conducting edges of the strips. It takes into account the thickness of the conductors, allowing for realistic modelling and simulation of on-chip and off-chip interconnections at high frequencies. |
en |
heal.publisher |
Publ by IEE, Stevenage, United Kingdom |
en |
heal.journalName |
IEE Proceedings: Microwaves, Antennas and Propagation |
en |
dc.identifier.doi |
10.1049/ip-map:19941116 |
en |
dc.identifier.isi |
ISI:A1994PA30100015 |
en |
dc.identifier.volume |
141 |
en |
dc.identifier.issue |
3 |
en |
dc.identifier.spage |
223 |
en |
dc.identifier.epage |
226 |
en |