dc.contributor.author |
Polydorou, A |
en |
dc.contributor.author |
Uzunoglu, N |
en |
dc.contributor.author |
Capsalis, C |
en |
dc.contributor.author |
Katehi, L |
en |
dc.date.accessioned |
2014-03-01T01:10:30Z |
|
dc.date.available |
2014-03-01T01:10:30Z |
|
dc.date.issued |
1995 |
en |
dc.identifier.issn |
0195-9271 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/11404 |
|
dc.subject |
schottky diode |
en |
dc.subject |
Transmission Line |
en |
dc.subject.classification |
Engineering, Electrical & Electronic |
en |
dc.subject.classification |
Optics |
en |
dc.subject.classification |
Physics, Applied |
en |
dc.subject.other |
Electric network synthesis |
en |
dc.subject.other |
Microstrip devices |
en |
dc.subject.other |
Schottky barrier diodes |
en |
dc.subject.other |
Semiconducting gallium arsenide |
en |
dc.subject.other |
Substrates |
en |
dc.subject.other |
Thin films |
en |
dc.subject.other |
Balanced mixers |
en |
dc.subject.other |
Five port hybrid ring mixers |
en |
dc.subject.other |
Mixer circuits |
en |
dc.title |
A five port hybrid ring mixer design |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1007/BF02085854 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1007/BF02085854 |
en |
heal.language |
English |
en |
heal.publicationDate |
1995 |
en |
heal.abstract |
The design, construction and measured experimental characteristics of a Ka-band balanced mixer based on microstrip technology, are presented. The mixer was realised using a configuration of a rat-race hybrid with five ports and two GaAs beam lead Schottky diodes. This type of balanced mixer is advantageous because it avoids via holes, airbridges and crossing transmission lines that deteriorate the performance of the circuit, and make its construction more difficult. The circuit was constructed in uniplanar microstrip configuration, so the circuits pattern was defined on one side of the substrate only, using thin film techniques. Performance characteristics of the mixer are presented as a function of RF and LO power, RF frequency and voltage bias of the Schottky diodes. © 1995 Plenum Publishing Corporation. |
en |
heal.publisher |
Kluwer Academic Publishers-Plenum Publishers |
en |
heal.journalName |
International Journal of Infrared and Millimeter Waves |
en |
dc.identifier.doi |
10.1007/BF02085854 |
en |
dc.identifier.isi |
ISI:A1995QE09400010 |
en |
dc.identifier.volume |
16 |
en |
dc.identifier.issue |
1 |
en |
dc.identifier.spage |
159 |
en |
dc.identifier.epage |
183 |
en |