LIGHT-EMISSION FROM SILICON NANOSTRUCTURES PRODUCED BY CONVENTIONAL LITHOGRAPHIC AND REACTIVE ION ETCHING TECHNIQUES

NASSIOPOULOS, AG; GRIGOROPOULOS, S; PAPADIMITRIOU, D; GOGOLIDES, E

dc.contributor.author	NASSIOPOULOS, AG	en
dc.contributor.author	GRIGOROPOULOS, S	en
dc.contributor.author	PAPADIMITRIOU, D	en
dc.contributor.author	GOGOLIDES, E	en
dc.date.accessioned	2014-03-01T01:11:09Z
dc.date.available	2014-03-01T01:11:09Z
dc.date.issued	1995	en
dc.identifier.issn	0370-1972	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/11566
dc.subject	Reactive Ion Etching	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	FABRICATION	en
dc.title	LIGHT-EMISSION FROM SILICON NANOSTRUCTURES PRODUCED BY CONVENTIONAL LITHOGRAPHIC AND REACTIVE ION ETCHING TECHNIQUES	en
heal.type	journalArticle	en
heal.identifier.primary	10.1002/pssb.2221900114	en
heal.identifier.secondary	http://dx.doi.org/10.1002/pssb.2221900114	en
heal.language	English	en
heal.publicationDate	1995	en
heal.abstract	Sub-ten nanometer diameter silicon pillars and silicon walls of the same thickness are Fabricated by using conventional optical lithography based on deep-UV exposure and reactive ion etching using fluorine only containing gases. The produced structures are studied for their luminescence properties. Visible photoluminescence with a peak in the range 580 to 650 nm is observed under Ar laser irradiation.	en
heal.publisher	AKADEMIE VERLAG GMBH	en
heal.journalName	PHYSICA STATUS SOLIDI B-BASIC RESEARCH	en
dc.identifier.doi	10.1002/pssb.2221900114	en
dc.identifier.isi	ISI:A1995RM43600013	en
dc.identifier.volume	190	en
dc.identifier.issue	1	en
dc.identifier.spage	91	en
dc.identifier.epage	95	en