Optical studies of ZnSe-ZnS GaAs(100) single quantum wells grown by photo-assisted vapor phase epitaxy

Tishchenko, VV; Raptis, YS; Anastassakis, E; Bondar, NV

dc.contributor.author	Tishchenko, VV	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Anastassakis, E	en
dc.contributor.author	Bondar, NV	en
dc.date.accessioned	2014-03-01T01:11:22Z
dc.date.available	2014-03-01T01:11:22Z
dc.date.issued	1995	en
dc.identifier.issn	0038-1098	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/11612
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0029480825&partnerID=40&md5=e36e5010be2d7a8af2a8e0beb26be0c3	en
dc.subject	A. quantum wells	en
dc.subject	B. epitaxy	en
dc.subject	C. optical properties	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Band structure	en
dc.subject.other	Epitaxial growth	en
dc.subject.other	Excitons	en
dc.subject.other	Frequencies	en
dc.subject.other	Monolayers	en
dc.subject.other	Optical properties	en
dc.subject.other	Phonons	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Semiconducting gallium arsenide	en
dc.subject.other	Semiconducting zinc compounds	en
dc.subject.other	Vapor phase epitaxy	en
dc.subject.other	Excitonic modes	en
dc.subject.other	Longitudinal optical phonon mode	en
dc.subject.other	Photo assisted vapor phase epitaxy	en
dc.subject.other	Single quantum wells	en
dc.subject.other	Subband heavy hole excitonic band	en
dc.subject.other	Zinc selenide	en
dc.subject.other	Semiconductor quantum wells	en
dc.title	Optical studies of ZnSe-ZnS GaAs(100) single quantum wells grown by photo-assisted vapor phase epitaxy	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1995	en
heal.abstract	Confinement effects of phonon and excitonic modes in two monolayers-thickness ZnSeZnS single quantum wells (SQWs) grown through photo-assisted vapor phase epitaxy (PAVPE) have been investigated by means of Raman, photoluminescence (PL) and reflection spectroscopy. It has been found that the frequency of the SQW longitudinal optical (LO) phonon mode is red shifted by 2.1 cm-1 relative to the LO phonon frequency of bulk ZnSe. This shift has been attributed to the combined opposite action of strain and confinement effects. The PL data have shown that the 1s state of the n = 1 subband heavy-hole (hh) excitonic band is blue shifted by 188 meV relative to the energy of free excitons in the bulk material. Largely responsible for this shift is the quantum confinement of electrons and holes. In addition, the transitions involving the 2s state of the hh excitons have been clearly observed. The 2s-1s energy splitting was found to be 38 meV. From this result, the binding energy of the 1shh exciton has been estimated to be 44 meV. © 1995.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid State Communications	en
dc.identifier.isi	ISI:A1995TA40400016	en
dc.identifier.volume	96	en
dc.identifier.issue	10	en
dc.identifier.spage	793	en
dc.identifier.epage	798	en