Reliability of the asperity contact model in determining charge injection across interfaces

Dervos Constantine, T

dc.contributor.author	Dervos Constantine, T	en
dc.date.accessioned	2014-03-01T01:11:28Z
dc.date.available	2014-03-01T01:11:28Z
dc.date.issued	1995	en
dc.identifier.issn	1070-9886	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/11648
dc.subject	Charge Injection	en
dc.subject	Current Density	en
dc.subject	Plasma Etching	en
dc.subject	Stainless Steel	en
dc.subject	Ultra High Vacuum	en
dc.subject.classification	Engineering, Manufacturing	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.other	Current density	en
dc.subject.other	Electric charge	en
dc.subject.other	Electrodes	en
dc.subject.other	Interfaces (materials)	en
dc.subject.other	Permittivity	en
dc.subject.other	Plasma etching	en
dc.subject.other	Semiconducting gallium arsenide	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Semiconductor device models	en
dc.subject.other	Semiconductor metal boundaries	en
dc.subject.other	Vacuum applications	en
dc.subject.other	Asperity contact model	en
dc.subject.other	Charge injection	en
dc.subject.other	Evaporated contacts	en
dc.subject.other	Metal metal contacts	en
dc.subject.other	Stainless steel electrodes	en
dc.subject.other	Ultra high vacuum	en
dc.subject.other	Electric contacts	en
dc.title	Reliability of the asperity contact model in determining charge injection across interfaces	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/95.390316	en
heal.identifier.secondary	http://dx.doi.org/10.1109/95.390316	en
heal.language	English	en
heal.publicationDate	1995	en
heal.abstract	Current profiles across mechanically contacted materials usually differ from the ones obtained by corresponding evaporated contacts. The asperity contact model has been brought up to cover such discrepancies. However, there is a lack of experimental evidence concerning its applicability on electronic injection across the interfaces. The work presented in this paper uses I-V curves of a well-documented device, the metal-semiconductor contact, as a tool to examine the validity of the asperity contact model and the implications of the interfacial layer, the axial contact force, the interfacial field and the relative permittivity of the surrounding space, on the injection process. Namely, the influence of interfacial layers has been studied in ultra-high-vacuum (UHV) environment (10(-10) mbar) using cleaved silicon samples, contacted by hemispherical metal electrodes (Au, Cu, In, Al) covered insitu by fresh overlayers. The applied axial forces were controlled by electromagnets which displaced stainless steel electrodes to contact chemically prepared and cleaved [110] Si samples in a UHV environment. The importance of the interfacial fields has been examined by using Si and GaAs samples having specific surface profiles, i,e., mesas with 10 mu m diameter and 1 mu m height, fabricated by plasma etching or wet chemistry processes. Finally, the effect of the relative permittivity of the surrounding space has been investigated by applying sinusoidal 50-Hz high current densities on metal-metal contacts in the laboratory and high vacuum (10(-6) mbar) environments. Utilizing the framework of the theory of the asperity contact model, the obtained results are in good agreement with the expected implications of the examined factors.	en
heal.publisher	IEEE, Piscataway, NJ, United States	en
heal.journalName	IEEE transactions on components, packaging, and manufacturing technology. Part A	en
dc.identifier.doi	10.1109/95.390316	en
dc.identifier.isi	ISI:A1995RD55000023	en
dc.identifier.volume	18	en
dc.identifier.issue	2	en
dc.identifier.spage	353	en
dc.identifier.epage	363	en