Sub-micrometre luminescent porous silicon structures using lithographically patterned substrates

Nassiopoulos, AG; Grigoropoulos, S; Canham, L; Halimaoui, A; Berbezier, I; Gogolides, E; Papadimitriou, D

dc.contributor.author	Nassiopoulos, AG	en
dc.contributor.author	Grigoropoulos, S	en
dc.contributor.author	Canham, L	en
dc.contributor.author	Halimaoui, A	en
dc.contributor.author	Berbezier, I	en
dc.contributor.author	Gogolides, E	en
dc.contributor.author	Papadimitriou, D	en
dc.date.accessioned	2014-03-01T01:11:31Z
dc.date.available	2014-03-01T01:11:31Z
dc.date.issued	1995	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/11676
dc.subject	Chemical vapour deposition	en
dc.subject	Luminescence	en
dc.subject	Silicon	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Anodic oxidation	en
dc.subject.other	Chemical vapor deposition	en
dc.subject.other	Crystal growth	en
dc.subject.other	Luminescence	en
dc.subject.other	Photolithography	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Scanning electron microscopy	en
dc.subject.other	Silica	en
dc.subject.other	Silicon nitride	en
dc.subject.other	Substrates	en
dc.subject.other	Surfaces	en
dc.subject.other	Transmission electron microscopy	en
dc.subject.other	Microphotoluminescence	en
dc.subject.other	Optical lithography	en
dc.subject.other	Pattern definition	en
dc.subject.other	Ultraviolet excitation	en
dc.subject.other	Porous silicon	en
dc.title	Sub-micrometre luminescent porous silicon structures using lithographically patterned substrates	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0040-6090(94)05675-4	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0040-6090(94)05675-4	en
heal.language	English	en
heal.publicationDate	1995	en
heal.abstract	Sub-micrometre area porous silicon structures were fabricated by anodization of patterned surfaces of crystalline p-type silicon, orientation (100) and resistivity 5-7 Ωcm. The mask for selective anodization was either silicon dioxide or silicon nitride, deposited onto silicon by low pressure chemical vapour deposition. The second mask was more resistant to the anodization solution (HF, ethanol and water solution) and was not dissolved during the anodization time used. When silicon dioxide was used as a mask, care was taken to stop anodization before the whole layer was removed. Patterning was done by optical lithography combined with a special process for sub-micrometre dimensions (silylation process). Dots and lines of dimensions down to 0.5 μm were produced, which exhibit strong red luminescence under UV excitation. The film thickness of the porous silicon structures in the sub-micrometre areas was smaller than the thickness in larger areas. The lateral growth of the structures under the mask was examined by scanning and transmission electron microscopy. Microphotoluminescence experiments in a confocal microscope were also used for mapping the luminescent areas. © 1995.	en
heal.publisher	ELSEVIER SCIENCE SA LAUSANNE	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/0040-6090(94)05675-4	en
dc.identifier.isi	ISI:A1995QB90000086	en
dc.identifier.volume	255	en
dc.identifier.issue	1-2	en
dc.identifier.spage	329	en
dc.identifier.epage	333	en