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A new planar device based on Seebeck effect for gas sensing applications

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dc.contributor.author Papadopoulos, CA en
dc.contributor.author Vlachos, DS en
dc.contributor.author Avaritsiotis, JN en
dc.date.accessioned 2014-03-01T01:11:36Z
dc.date.available 2014-03-01T01:11:36Z
dc.date.issued 1996 en
dc.identifier.issn 0925-4005 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/11736
dc.subject Gas sensing en
dc.subject Planar structure en
dc.subject Seebeck effect en
dc.subject.classification Chemistry, Analytical en
dc.subject.classification Electrochemistry en
dc.subject.classification Instruments & Instrumentation en
dc.subject.other SENSORS en
dc.title A new planar device based on Seebeck effect for gas sensing applications en
heal.type journalArticle en
heal.identifier.primary 10.1016/S0925-4005(97)80022-6 en
heal.identifier.secondary http://dx.doi.org/10.1016/S0925-4005(97)80022-6 en
heal.language English en
heal.publicationDate 1996 en
heal.abstract A new planar sensor structure has been developed, which takes advantage of the differential temperature appearing between the two halves of a tin or an indium oxide film, one half of which is covered with a catalyst, in the presence of a combustible gas. Since the rates of reaction of the combustible gas on the two halves of the film are expected to be different, different amounts of heat are delivered at the two halves of the film, resulting in a temperature gradient across the film. According to the Seebeck effect, this temperature gradient produces a voltage difference at the two edges of the film. Different Seebeck voltage values have been recorded when the structure is exposed to various gases, due to the different heat of adsorption or combustion delivered from each gas at the two portions of the film. en
heal.publisher ELSEVIER SCIENCE SA LAUSANNE en
heal.journalName Sensors and Actuators, B: Chemical en
dc.identifier.doi 10.1016/S0925-4005(97)80022-6 en
dc.identifier.isi ISI:A1996WC20900057 en
dc.identifier.volume 34 en
dc.identifier.issue 1-3 en
dc.identifier.spage 524 en
dc.identifier.epage 527 en


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