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A Si 1.8 GHz RLC filter with tunable center frequency and quality factor

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dc.contributor.author Pipilos, S en
dc.contributor.author Tsividis, YP en
dc.contributor.author Fenk, J en
dc.contributor.author Papananos, Y en
dc.date.accessioned 2014-03-01T01:11:38Z
dc.date.available 2014-03-01T01:11:38Z
dc.date.issued 1996 en
dc.identifier.issn 0018-9200 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/11748
dc.subject Bandpass Filter en
dc.subject Dynamic Range en
dc.subject Quality Factor en
dc.subject Second Order en
dc.subject.classification Engineering, Electrical & Electronic en
dc.subject.other Bipolar semiconductor devices en
dc.subject.other Electric impedance en
dc.subject.other Electric inductors en
dc.subject.other Electric resistance en
dc.subject.other Electric variables measurement en
dc.subject.other Mathematical models en
dc.subject.other Semiconducting silicon en
dc.subject.other Spurious signal noise en
dc.subject.other Frequency tuning en
dc.subject.other Parasitic capacitances en
dc.subject.other Quality factor en
dc.subject.other Tunable center frequency en
dc.subject.other Bandpass filters en
dc.title A Si 1.8 GHz RLC filter with tunable center frequency and quality factor en
heal.type journalArticle en
heal.identifier.primary 10.1109/4.540064 en
heal.identifier.secondary http://dx.doi.org/10.1109/4.540064 en
heal.language English en
heal.publicationDate 1996 en
heal.abstract A second-order active bandpass filter using integrated inductors was implemented in Si bipolar technology. The filter uses special techniques to make the quality factor and the center frequency tunable. For a nominal center frequency of 1.8 GHz and a quality factor of 35, the filter has 1 dB compression dynamic range of 40 dB, and draws 8.7 mA from a 2.8 V supply. en
heal.publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC en
heal.journalName IEEE Journal of Solid-State Circuits en
dc.identifier.doi 10.1109/4.540064 en
dc.identifier.isi ISI:A1996VM45300024 en
dc.identifier.volume 31 en
dc.identifier.issue 10 en
dc.identifier.spage 1517 en
dc.identifier.epage 1524 en


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