Characterization of light emitting silicon nanopillars produced by lithography and etching

Grigoropoulos, S; Nassiopoulos, AG; Travlos, A; Papadimitriou, D; Kennou, S; Ladas, S

dc.contributor.author	Grigoropoulos, S	en
dc.contributor.author	Nassiopoulos, AG	en
dc.contributor.author	Travlos, A	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Kennou, S	en
dc.contributor.author	Ladas, S	en
dc.date.accessioned	2014-03-01T01:11:46Z
dc.date.available	2014-03-01T01:11:46Z
dc.date.issued	1996	en
dc.identifier.issn	0169-4332	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/11809
dc.subject	Atomic Force Microscopy	en
dc.subject	Electron Diffraction	en
dc.subject	High Temperature	en
dc.subject	Transmission Electron Microscopy	en
dc.subject	X Ray Photoelectron Spectroscopy	en
dc.subject.classification	Chemistry, Physical	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Atomic force microscopy	en
dc.subject.other	Crystal impurities	en
dc.subject.other	Electron diffraction	en
dc.subject.other	Etching	en
dc.subject.other	Lithography	en
dc.subject.other	Luminescence of inorganic solids	en
dc.subject.other	Nanotechnology	en
dc.subject.other	Scanning electron microscopy	en
dc.subject.other	Semiconductor device structures	en
dc.subject.other	Surface structure	en
dc.subject.other	Transmission electron microscopy	en
dc.subject.other	X ray photoelectron spectroscopy	en
dc.subject.other	Deep ultrahigh vacuum lithography	en
dc.subject.other	Fluorine-based highly anisotropic silicon etching	en
dc.subject.other	Luminescence peak	en
dc.subject.other	Red green spectral region	en
dc.subject.other	Semiconducting silicon	en
dc.title	Characterization of light emitting silicon nanopillars produced by lithography and etching	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0169-4332(96)00081-5	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0169-4332(96)00081-5	en
heal.language	English	en
heal.publicationDate	1996	en
heal.abstract	Silicon nanopillars were produced by using deep-UV lithography, fluorine based highly anisotropic silicon etching and further thinning by high temperature thermal or chemical oxidation and oxide removal. The obtained structures were fully characterized by scanning and transmission electron microscopy, electron diffraction, atomic force microscopy and X-ray photoelectron spectroscopy. It was verified that the obtained nanopillars by the above process are of perfect crystallinity, the bottom silicon surface on which they lie is very smooth and that minor surface contamination by carbon or oxygen is present on both the bottom silicon surface and the surface surrounding the nanopillars. The obtained luminescence peak is in the red-green spectral region.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Applied Surface Science	en
dc.identifier.doi	10.1016/0169-4332(96)00081-5	en
dc.identifier.isi	ISI:A1996VJ86100076	en
dc.identifier.volume	102	en
dc.identifier.spage	377	en
dc.identifier.epage	380	en