Correlations between structural and optoelectronic properties of a-Si:H grown by homogeneous chemical vapor deposition

Danesh, P; Toneva, A; Savatinova, I; Liarokapis, E

dc.contributor.author	Danesh, P	en
dc.contributor.author	Toneva, A	en
dc.contributor.author	Savatinova, I	en
dc.contributor.author	Liarokapis, E	en
dc.date.accessioned	2014-03-01T01:11:48Z
dc.date.available	2014-03-01T01:11:48Z
dc.date.issued	1996	en
dc.identifier.issn	0022-3093	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/11821
dc.subject	Chemical Vapor Deposited	en
dc.subject	Hydrogen Bond	en
dc.subject	Microstructures	en
dc.subject	Raman Spectra	en
dc.subject.classification	Materials Science, Ceramics	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.other	Amorphous silicon	en
dc.subject.other	Chemical vapor deposition	en
dc.subject.other	Film preparation	en
dc.subject.other	Hydrogen bonds	en
dc.subject.other	Infrared spectroscopy	en
dc.subject.other	Microstructure	en
dc.subject.other	Optical properties	en
dc.subject.other	Photoconductivity	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Thermal effects	en
dc.subject.other	Hydrogenated amorphous silicon	en
dc.subject.other	Optoelectronic properties	en
dc.subject.other	Silicon network disorder	en
dc.subject.other	Urbach energy	en
dc.subject.other	Amorphous films	en
dc.title	Correlations between structural and optoelectronic properties of a-Si:H grown by homogeneous chemical vapor deposition	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0022-3093(96)00490-5	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0022-3093(96)00490-5	en
heal.language	English	en
heal.publicationDate	1996	en
heal.abstract	The effect of microstructure (in the sense of hydrogen bonding) and degree of disorder of the silicon network on the optoelectronic properties of a-Si:H films is studied. The films were prepared by homogeneous chemical vapor deposition. Gas pressure, gas flowrate and gas temperature were kept constant. Film properties were changed by varying the substrate temperature. The deposition rate was about 4 nm/min and did not vary with the substrate temperature. The structure related parameters were evaluated from IR and Raman spectra. The microstructure fraction decreases with substrate temperature and the TO-band in Raman spectra shifts to higher frequencies. The electrical and optical measurements show an increase in photo- and dark conductivities and a decrease in the Urbach energy with the increase in substrate temperature. The obtained correlations between the optoelectronic and structural parameters suggest that in order to prepare a-Si:H with the best properties there is an optimum amount of hydrogen, for which the lowest microstructure fraction should be reached. Moreover, the optoelectronic properties are in correlation with the degree of structural disorder when it is associated with the bond length distortion.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Journal of Non-Crystalline Solids	en
dc.identifier.doi	10.1016/S0022-3093(96)00490-5	en
dc.identifier.isi	ISI:A1996VV24500008	en
dc.identifier.volume	204	en
dc.identifier.issue	3	en
dc.identifier.spage	265	en
dc.identifier.epage	272	en