On the electronic interaction between additives and semiconducting oxide gas sensors

Vlachos, DS; Papadopoulos, CA; Avaritsiotis, JN

dc.contributor.author	Vlachos, DS	en
dc.contributor.author	Papadopoulos, CA	en
dc.contributor.author	Avaritsiotis, JN	en
dc.date.accessioned	2014-03-01T01:12:09Z
dc.date.available	2014-03-01T01:12:09Z
dc.date.issued	1996	en
dc.identifier.issn	0003-6951	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/11974
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0001714710&partnerID=40&md5=7bb9b59023c964be6187de5ef4a89394	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	TIN OXIDE	en
dc.subject.other	MODEL	en
dc.title	On the electronic interaction between additives and semiconducting oxide gas sensors	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1996	en
heal.abstract	A model for the electronic interaction between additives and semiconducting oxide gas sensors is presented. The model is based on the depletion layer that is created due to the metal-semiconductor contact forced by the presence of a metallic additive. This depletion layer corresponds to an active grain size that is smaller than the geometrical one. Thus, the work function of the metal is connected to the change of sensor characteristics. Moreover, the dependence of the sensitivity on the amount of the deposited additive is explained on the same basis. Experimental results are presented in the case of tin oxide thin film gas sensors with Pd, Pt, and Ni in the presence of zero grade air and carbon monoxide. The experimental results are in excellent qualitative agreement with the proposed model. (C) 1996 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Applied Physics Letters	en
dc.identifier.isi	ISI:A1996UZ02400020	en
dc.identifier.volume	69	en
dc.identifier.issue	5	en
dc.identifier.spage	650	en
dc.identifier.epage	652	en