Raman scattering in sputtered amorphous Ge25Se75-xBix films

Mytilineou, E; Chao, BS; Papadimitriou, D

dc.contributor.author	Mytilineou, E	en
dc.contributor.author	Chao, BS	en
dc.contributor.author	Papadimitriou, D	en
dc.date.accessioned	2014-03-01T01:12:13Z
dc.date.available	2014-03-01T01:12:13Z
dc.date.issued	1996	en
dc.identifier.issn	0022-3093	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12013
dc.subject	Raman Scattering	en
dc.subject	Raman Spectra	en
dc.subject	Spectrum	en
dc.subject.classification	Materials Science, Ceramics	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.other	CHALCOGENIDE GLASSES	en
dc.title	Raman scattering in sputtered amorphous Ge25Se75-xBix films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0022-3093(95)00571-4	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0022-3093(95)00571-4	en
heal.language	English	en
heal.publicationDate	1996	en
heal.abstract	Raman spectra of sputtered amorphous Ge25Se75-xBix films, with x from 0 to 19, have been studied. For x = 0 the typical spectrum of an amorphous GeSe3 glass is obtained. It is dominated by the peaks at 200 and 220 cm(-1), characteristic of the Ge(Se-1/2)(4) tetrahedra and a broad peak at 265 cm(-1), due to the excess Se-Se bonds. The intensity of the 200, 220, 265 cm(-1) peaks decrease and a new broad asymmetric peak appears at 175 cm(-1) whose intensity increases with the increase of the amount of Bi incorporated into the films, This later peak is attributed to Bi2Se3 structural units.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Journal of Non-Crystalline Solids	en
dc.identifier.doi	10.1016/0022-3093(95)00571-4	en
dc.identifier.isi	ISI:A1996UG94400009	en
dc.identifier.volume	195	en
dc.identifier.issue	3	en
dc.identifier.spage	279	en
dc.identifier.epage	285	en