Static current-voltage characteristics of silicon n+-i-n+ resistors at liquid helium temperatures

Tsamakis, D; Glezos, N

dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Glezos, N	en
dc.date.accessioned	2014-03-01T01:12:19Z
dc.date.available	2014-03-01T01:12:19Z
dc.date.issued	1996	en
dc.identifier.issn	1155-4339	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12057
dc.subject	Current Density	en
dc.subject	current-voltage characteristic	en
dc.subject	i-v characteristic	en
dc.subject.classification	Physics, Multidisciplinary	en
dc.subject.other	Current density	en
dc.subject.other	Current voltage characteristics	en
dc.subject.other	Electron transport properties	en
dc.subject.other	Hot carriers	en
dc.subject.other	Low temperature effects	en
dc.subject.other	Negative resistance	en
dc.subject.other	Resistors	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Semiconductor device models	en
dc.subject.other	Silicon on insulator technology	en
dc.subject.other	Freeze out effects	en
dc.subject.other	High injection current densities	en
dc.subject.other	Liquid helium temperatures	en
dc.subject.other	Silicon resistors	en
dc.subject.other	Semiconductor devices	en
dc.title	Static current-voltage characteristics of silicon n+-i-n+ resistors at liquid helium temperatures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1051/jp4:1996314	en
heal.identifier.secondary	http://dx.doi.org/10.1051/jp4:1996314	en
heal.language	English	en
heal.publicationDate	1996	en
heal.abstract	The behaviour of the (I-V) characteristics is investigated in n(+)-i-n(+) highly compensated Si resistors at temperatures 4.2-45K. The conduction mechanisms are discussed in detail here. The prebreakdown and breakdown regions of I-V characteristics were simulated by a one-dimensional model including the evidence of impurity high compensation and freeze out effects as well as the shallow-dopants impact ionisation by the injected hot carriers into the base. Negative resistance (S-type) phenomena are also observed on the characteristics for high injection current densities.	en
heal.publisher	EDITIONS PHYSIQUE	en
heal.journalName	Journal De Physique. IV : JP	en
dc.identifier.doi	10.1051/jp4:1996314	en
dc.identifier.isi	ISI:A1996UU97300015	en
dc.identifier.volume	6	en
dc.identifier.issue	3	en
dc.identifier.spage	93	en
dc.identifier.epage	98	en