Surface and plasma simulation of deposition processes: CH4 plasmas for the growth of diamondlike carbon

Mantzaris, NV; Gogolides, E; Boudouvis, AG; Rhallabi, A; Turban, G

dc.contributor.author	Mantzaris, NV	en
dc.contributor.author	Gogolides, E	en
dc.contributor.author	Boudouvis, AG	en
dc.contributor.author	Rhallabi, A	en
dc.contributor.author	Turban, G	en
dc.date.accessioned	2014-03-01T01:12:21Z
dc.date.available	2014-03-01T01:12:21Z
dc.date.issued	1996	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12073
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0000591011&partnerID=40&md5=ba6e38675b350ceb082a1f60e912444e	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	RADIOFREQUENCY GLOW-DISCHARGES	en
dc.subject.other	ION ENERGY	en
dc.subject.other	FILMS	en
dc.title	Surface and plasma simulation of deposition processes: CH4 plasmas for the growth of diamondlike carbon	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1996	en
heal.abstract	A surface model was developed for diamondlike-carbon film deposition, and was connected in a self-consistent way with a one-dimensional plasma chemistry and physics model for a CH4 radio-frequency (rf) discharge. The surface model considers the adsorption of multiple species (CH3, CH2, and H), and solves for the surface coverage of each species. Comparison is also done with a one-adsorbed-species model. Deposition is assumed to take place via direct ion incorporation, and ion-induced stitching of adsorbed neutrals; film removal takes place via etching and sputtering. The effects of ion flux/energy and surface temperature are examined in detail: At high ion energies direct ion incorporation dominates, in spite of competition with sputtering; at intermediate energies stitching prevails, while for lower ion energies etching can become largest. Mass balances are written at the surface - gas interface, permitting the determination of the effective sticking coefficients of the reacting neutrals. The sticking coefficients calculated from the surface model are fed back into the gas-phase chemistry model to recalculate the neutral densities. The process is repeated until a self-consistent solution is obtained. It is shown that the effective sticking coefficient of a neutral changes drastically from a low value for the plasma-off (or low ion energy) state, to a high value for the plasma-on and high ion energy state, resulting in higher consumption at the surface. The results show that it is imperative for meaningful results to solve surface and gas-phase chemistry models in a self-consistent way, a fact demonstrated by successful comparison with experimental data for the deposition rate and the gas-phase densities. © 1996 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.isi	ISI:A1996UC07300058	en
dc.identifier.volume	79	en
dc.identifier.issue	7	en
dc.identifier.spage	3718	en
dc.identifier.epage	3729	en