Surface-related phonon mode in porous GaP

Tiginyanu, IM; Ursaki, VV; Karavanskii, VA; Sokolov, VN; Raptis, YS; Anastassakis, E

dc.contributor.author	Tiginyanu, IM	en
dc.contributor.author	Ursaki, VV	en
dc.contributor.author	Karavanskii, VA	en
dc.contributor.author	Sokolov, VN	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:12:21Z
dc.date.available	2014-03-01T01:12:21Z
dc.date.issued	1996	en
dc.identifier.issn	0038-1098	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12074
dc.subject	A. Nanostructures	en
dc.subject	A. Semiconductors	en
dc.subject	D. Phonons	en
dc.subject	E. Inelastic light scattering	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	MICROCRYSTALLINE SILICON	en
dc.subject.other	RAMAN-SPECTRA	en
dc.subject.other	SIZE	en
dc.subject.other	PHOTOLUMINESCENCE	en
dc.title	Surface-related phonon mode in porous GaP	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0038-1098(95)00677-X	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0038-1098(95)00677-X	en
heal.language	English	en
heal.publicationDate	1996	en
heal.abstract	Porous GaP layers prepared by electrochemical anodization of (100) and (111) A-oriented n-GaP crystalline substrates in HF solution have been studied by Raman spectroscopy. A surface vibrational mode at 397cm(-1) was observed in porous GaP. The process of anodization results in downward shifts of the TO and LO phonon frequencies, which are attributed to phonon confinement in crystalline GaP particles of nanometer size.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid State Communications	en
dc.identifier.doi	10.1016/0038-1098(95)00677-X	en
dc.identifier.isi	ISI:A1996TT47300005	en
dc.identifier.volume	97	en
dc.identifier.issue	8	en
dc.identifier.spage	675	en
dc.identifier.epage	678	en