dc.contributor.author |
Vlachos, DS |
en |
dc.contributor.author |
Papadopoulos, CA |
en |
dc.contributor.author |
Avaritsiotis, JN |
en |
dc.date.accessioned |
2014-03-01T01:12:34Z |
|
dc.date.available |
2014-03-01T01:12:34Z |
|
dc.date.issued |
1997 |
en |
dc.identifier.issn |
0925-4005 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/12148 |
|
dc.subject |
Ethanol interference |
en |
dc.subject |
MOS |
en |
dc.subject |
Seebeck |
en |
dc.subject.classification |
Chemistry, Analytical |
en |
dc.subject.classification |
Electrochemistry |
en |
dc.subject.classification |
Instruments & Instrumentation |
en |
dc.subject.other |
Carrier concentration |
en |
dc.subject.other |
Chemisorption |
en |
dc.subject.other |
Ethanol |
en |
dc.subject.other |
Gates (transistor) |
en |
dc.subject.other |
Indium compounds |
en |
dc.subject.other |
Methane |
en |
dc.subject.other |
MOS devices |
en |
dc.subject.other |
Sputter deposition |
en |
dc.subject.other |
Thin film devices |
en |
dc.subject.other |
Channel conductance |
en |
dc.subject.other |
Ethanol interference |
en |
dc.subject.other |
Seebeck effect devices |
en |
dc.subject.other |
Chemical sensors |
en |
dc.title |
A technique for suppressing ethanol interference employing Seebeck effect devices with carrier concentration modulation |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1016/S0925-4005(97)00215-3 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1016/S0925-4005(97)00215-3 |
en |
heal.language |
English |
en |
heal.publicationDate |
1997 |
en |
heal.abstract |
Thin sputtered indium oxide films with an additive deposited on the half of their surface are considered as Seebeck effect devices for sensing of methane and ethanol. The electron concentration of the oxide film is controlled with an applied voltage perpendicular to the film with the use of a buried gate under it, in the same way the channel conductance in a MOS device is controlled by the gale voltage. Due to the different chemisorption mechanisms of methane and ethanol, a gate voltage modulating the free electron concentration of the oxide film enhances sensitivity to methane, whereas it does not influence sensitivity to ethanol. (C) 1997 Elsevier Science S.A. |
en |
heal.publisher |
ELSEVIER SCIENCE SA |
en |
heal.journalName |
Sensors and Actuators, B: Chemical |
en |
dc.identifier.doi |
10.1016/S0925-4005(97)00215-3 |
en |
dc.identifier.isi |
ISI:000071717900001 |
en |
dc.identifier.volume |
44 |
en |
dc.identifier.issue |
1-3 |
en |
dc.identifier.spage |
239 |
en |
dc.identifier.epage |
242 |
en |