Angular dispersion of optical phonon frequencies in strained cubic crystals

Anastassakis, E

dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:12:38Z
dc.date.available	2014-03-01T01:12:38Z
dc.date.issued	1997	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12181
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0003187734&partnerID=40&md5=c18745683af64beafb94f1b8016e36d0	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	BACKWARD RAMAN-SCATTERING	en
dc.subject.other	HETEROSTRUCTURES	en
dc.subject.other	STRESS	en
dc.subject.other	SPECTROSCOPY	en
dc.subject.other	SILICON	en
dc.subject.other	SUPERLATTICES	en
dc.subject.other	GAAS	en
dc.subject.other	SI	en
dc.title	Angular dispersion of optical phonon frequencies in strained cubic crystals	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1997	en
heal.abstract	The use of Raman spectroscopy for strain characterization of materials often requires scattering configurations in which the optical phonon wavevector does not coincide with any of the strain-modified phonon eigenvectors. It is shown that the optical phonon frequencies in strained zincblende crystals exhibit angular dispersion similar to that of optical phonons in unstrained biaxial and uniaxial crystals. The entire formalism is developed on the basis of the relative magnitude of the longitudinal-transverse frequency splittings and the strain-induced frequency splittings. The shifts produced at grazing incidence are above the usual spectroscopic limits of accuracy and can influence the interpretation of data in terms of strain relaxation or defects. The model is applied to diamond as well as zincblende-type structures. Specific examples are worked out in detail for scattering geometries under grazing incidence in [001] and [111] strained heterojunctions. (C) 1997 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.isi	ISI:A1997WT43200019	en
dc.identifier.volume	81	en
dc.identifier.issue	7	en
dc.identifier.spage	3046	en
dc.identifier.epage	3056	en