Electroluminescent solid state devices based on silicon nanowires, fabricated by using lithography and etching techniques

Nassiopoulos, AG; Grigoropoulos, S; Papadimitriou, D

dc.contributor.author	Nassiopoulos, AG	en
dc.contributor.author	Grigoropoulos, S	en
dc.contributor.author	Papadimitriou, D	en
dc.date.accessioned	2014-03-01T01:12:50Z
dc.date.available	2014-03-01T01:12:50Z
dc.date.issued	1997	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12261
dc.subject	Electroluminescence	en
dc.subject	Etching techniques	en
dc.subject	Lithography	en
dc.subject	Nanowires	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Electroluminescence	en
dc.subject.other	Etching	en
dc.subject.other	Fabrication	en
dc.subject.other	Gold	en
dc.subject.other	Lithography	en
dc.subject.other	Polymethyl methacrylates	en
dc.subject.other	Semiconducting indium compounds	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Semiconductor diodes	en
dc.subject.other	Carrier transport	en
dc.subject.other	Indium tin oxide	en
dc.subject.other	Silicon nanowire	en
dc.subject.other	Semiconductor quantum wires	en
dc.title	Electroluminescent solid state devices based on silicon nanowires, fabricated by using lithography and etching techniques	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0040-6090(96)09409-6	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0040-6090(96)09409-6	en
heal.language	English	en
heal.publicationDate	1997	en
heal.abstract	Silicon quantum wires in the form of silicon pillars on silicon were fabricated by using lithography and etching techniques. They were then used to fabricate electroluminescent silicon devices and to start the investigation of carrier transport through the wires. Isolation between wires was achieved by a non-conductive transparent polymer which was used to fill in the device area and to form a solid matrix for the thin silicon pillars. A semitransparent gold layer, 15-20 nm thick, or indium tin oxide, 100 nm thick, was used as contact metal. The diodes showed rectifying behavior and electroluminescence at room temperature at forward bias. The onset of light emission was in general at a bias voltage of the order of 10-12 V but in some cases light was observed at much lower voltages (3-5 V). Light emission was stable over several hours of operation. (C) 1997 Elsevier Science S.A.	en
heal.publisher	ELSEVIER SCIENCE SA LAUSANNE	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/S0040-6090(96)09409-6	en
dc.identifier.isi	ISI:A1997XG34400041	en
dc.identifier.volume	297	en
dc.identifier.issue	1-2	en
dc.identifier.spage	176	en
dc.identifier.epage	178	en