Hexagonal cadmium chalcogenide thin films prepared by electrodeposition from near-boiling aqueous solutions

Bouroushian, M; Loizos, Z; Spyrellis, N; Maurin, G

dc.contributor.author	Bouroushian, M	en
dc.contributor.author	Loizos, Z	en
dc.contributor.author	Spyrellis, N	en
dc.contributor.author	Maurin, G	en
dc.date.accessioned	2014-03-01T01:12:58Z
dc.date.available	2014-03-01T01:12:58Z
dc.date.issued	1997	en
dc.identifier.issn	0169-4332	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12301
dc.subject	Aqueous Solution	en
dc.subject	Band Gap	en
dc.subject	Crystal Structure	en
dc.subject	High Temperature	en
dc.subject	Phase Transformation	en
dc.subject	Thin Film	en
dc.subject	Titanium	en
dc.subject.classification	Chemistry, Physical	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Crystal structure	en
dc.subject.other	Electrochemical electrodes	en
dc.subject.other	Electrodeposition	en
dc.subject.other	Electrolytes	en
dc.subject.other	Energy gap	en
dc.subject.other	Film growth	en
dc.subject.other	Morphology	en
dc.subject.other	Phase transitions	en
dc.subject.other	Semiconducting cadmium compounds	en
dc.subject.other	Solutions	en
dc.subject.other	Thin films	en
dc.subject.other	Titanium	en
dc.subject.other	Hexagonal cadmium chalcogenide thin films	en
dc.subject.other	Semiconducting films	en
dc.title	Hexagonal cadmium chalcogenide thin films prepared by electrodeposition from near-boiling aqueous solutions	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0169-4332(97)80191-2	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0169-4332(97)80191-2	en
heal.language	English	en
heal.publicationDate	1997	en
heal.abstract	Thin, n-type, CdSe and CdSexTe1-x semiconductive films were prepared by cathodic electrodeposition onto titanium electrodes. An electrochemical cell was specially designed in order to perform electrodeposition in a near-boiling aqueous-ethyleneglycol bath at a temperature of approximately 110 degrees C. The composition of the as-grown films, their crystal structure, morphology and band-gap width were studied as a function of the deposition potential and chalcogen ion concentration. It is shown that high temperatures have a positive effect on the crystal quality and the photoresponse stability of cadmium chalcogenide thin films even by employing electrolytes rather concentrated in selenous acid. Under specific conditions, a small shift in deposition potential brings about a complete phase transformation of the CdSe layers. In this manner, the described method enables the preparation of hexagonal CdSe deposits.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Applied Surface Science	en
dc.identifier.doi	10.1016/S0169-4332(97)80191-2	en
dc.identifier.isi	ISI:A1997XC52900001	en
dc.identifier.volume	115	en
dc.identifier.issue	2	en
dc.identifier.spage	103	en
dc.identifier.epage	110	en