Lifetime of phonons in semiconductors under pressure

Ulrich, C; Anastassakis, E; Syassen, K; Debernardi, A; Cardona, M

dc.contributor.author	Ulrich, C	en
dc.contributor.author	Anastassakis, E	en
dc.contributor.author	Syassen, K	en
dc.contributor.author	Debernardi, A	en
dc.contributor.author	Cardona, M	en
dc.date.accessioned	2014-03-01T01:13:08Z
dc.date.available	2014-03-01T01:13:08Z
dc.date.issued	1997	en
dc.identifier.issn	0031-9007	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12334
dc.subject.classification	Physics, Multidisciplinary	en
dc.subject.other	Frequencies	en
dc.subject.other	Hydrostatic pressure	en
dc.subject.other	Perturbation techniques	en
dc.subject.other	Phonons	en
dc.subject.other	Pressure effects	en
dc.subject.other	Semiconducting germanium	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Anharmonic decay	en
dc.subject.other	First order Raman lines	en
dc.subject.other	Full width at half maximum	en
dc.subject.other	Phonon lifetime	en
dc.subject.other	Raman scattering	en
dc.title	Lifetime of phonons in semiconductors under pressure	en
heal.type	journalArticle	en
heal.identifier.primary	10.1103/PhysRevLett.78.1283	en
heal.identifier.secondary	http://dx.doi.org/10.1103/PhysRevLett.78.1283	en
heal.language	English	en
heal.publicationDate	1997	en
heal.abstract	We have measured the pressure dependence of the width of the first-order Raman lines in Si and Ge at low temperature. The width increases linearly with hydrostatic pressure, which implies a decrease of the lifetime of the long-wavelength optical phonons. The results are compared with recent first-principles calculations of anharmonic decay into two phonons of lower energy, based on third-order density-functional perturbation theory. Provided the calculations are slightly adjusted so that the relevant frequencies agree exactly with the measured ones, the agreement for the linewidths between theory and experiment is excellent.	en
heal.publisher	AMERICAN PHYSICAL SOC	en
heal.journalName	Physical Review Letters	en
dc.identifier.doi	10.1103/PhysRevLett.78.1283	en
dc.identifier.isi	ISI:A1997WH91700022	en
dc.identifier.volume	78	en
dc.identifier.issue	7	en
dc.identifier.spage	1283	en
dc.identifier.epage	1286	en