Measurement and modeling of the anomalous dynamic response of high resistivity diodes at cryogenic temperatures

Misiakos, K; Tsamakis, D; Tsoi, E

dc.contributor.author	Misiakos, K	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Tsoi, E	en
dc.date.accessioned	2014-03-01T01:13:10Z
dc.date.available	2014-03-01T01:13:10Z
dc.date.issued	1997	en
dc.identifier.issn	00381101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12340
dc.subject	Breakdown Voltage	en
dc.subject	Dynamic Response	en
dc.subject	High Frequency	en
dc.subject	i-v characteristic	en
dc.subject	Impact Ionization	en
dc.subject.other	Capacitance	en
dc.subject.other	Charge carriers	en
dc.subject.other	Cryogenics	en
dc.subject.other	Current voltage characteristics	en
dc.subject.other	Electric breakdown of solids	en
dc.subject.other	Electric conductivity of solids	en
dc.subject.other	Ionization of solids	en
dc.subject.other	Low temperature operations	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Semiconductor device models	en
dc.subject.other	Semiconductor doping	en
dc.subject.other	Substrates	en
dc.subject.other	Anomalous dynamic responses	en
dc.subject.other	Cryogenic temperatures	en
dc.subject.other	Semiconductor diodes	en
dc.title	Measurement and modeling of the anomalous dynamic response of high resistivity diodes at cryogenic temperatures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0038-1101(97)00060-9	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0038-1101(97)00060-9	en
heal.publicationDate	1997	en
heal.abstract	A negative dynamic conductance and a negative dynamic capacitance were observed when a high resistivity (10 kΩ cm) silicon p/i/n diode is based in the double injection regime at liquid helium temperatures. At high frequencies (above 100 kHz) the negative capacitance varies as l/ω2 while the negative conductance exhibits a more complex behavior and, eventually changes sign at even higher frequencies (1 MHz). A quantitative model is presented which accounts for the conductance and capacitance behavior as a function of frequency and bias. The model is based on the shallow donor impact ionization and carrier trapping at the ionized donors. Additionally the breakdown voltage of the static I-V characteristics is used to calculate the unintentional compensation in the high resistivity substrate. © 1997 Elsevier Science Ltd.	en
heal.journalName	Solid-State Electronics	en
dc.identifier.doi	10.1016/S0038-1101(97)00060-9	en
dc.identifier.volume	41	en
dc.identifier.issue	8	en
dc.identifier.spage	1099	en
dc.identifier.epage	1103	en