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Order-disorder phase transition in CdAl2S4 under hydrostatic pressure

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dc.contributor.author Burlakov, II en
dc.contributor.author Raptis, Y en
dc.contributor.author Ursaki, VV en
dc.contributor.author Anastassakis, E en
dc.contributor.author Tiginyanu, IM en
dc.date.accessioned 2014-03-01T01:13:15Z
dc.date.available 2014-03-01T01:13:15Z
dc.date.issued 1997 en
dc.identifier.issn 0038-1098 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/12389
dc.subject A. Semiconductors en
dc.subject D. Order-disorder effects en
dc.subject D. Phase transitions en
dc.subject E. Inelastic light scattering en
dc.subject E. Strain en
dc.subject High pressure en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other RAMAN MODES en
dc.subject.other COMPOUND SEMICONDUCTORS en
dc.subject.other CUGAS2 en
dc.subject.other CHALCOPYRITE en
dc.subject.other BEHAVIOR en
dc.subject.other DEPENDENCE en
dc.subject.other AGGAS2 en
dc.subject.other GAP en
dc.title Order-disorder phase transition in CdAl2S4 under hydrostatic pressure en
heal.type journalArticle en
heal.identifier.primary 10.1016/S0038-1098(96)00602-3 en
heal.identifier.secondary http://dx.doi.org/10.1016/S0038-1098(96)00602-3 en
heal.language English en
heal.publicationDate 1997 en
heal.abstract CdAl2S4 single crystals with the defect chalcopyrite structure have been studied by Raman spectroscopy at hydrostatic pressures up to 150 kbar. The Raman scattering spectra were found to undergo substantial changes around 60 and 100 kbar, due to an order-disorder transition in the cation sublattice, which occurs in two stages as predicted earlier. From the pressure dependence of optical phonon frequencies we obtained values for mode shift parameters. The irreversible disappearance of Raman scattering signals at pressures above 140 kbar was attributed to a phase transition from the adamantine structure to a higher symmetry rocksalt-type structure. Copyright (C) 1996 Elsevier Science Ltd en
heal.publisher PERGAMON-ELSEVIER SCIENCE LTD en
heal.journalName Solid State Communications en
dc.identifier.doi 10.1016/S0038-1098(96)00602-3 en
dc.identifier.isi ISI:A1997WB80400016 en
dc.identifier.volume 101 en
dc.identifier.issue 5 en
dc.identifier.spage 377 en
dc.identifier.epage 381 en


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