Selection rules of Raman scattering by optical phonons in strained cubic crystals

Anastassakis, E

dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:13:19Z
dc.date.available	2014-03-01T01:13:19Z
dc.date.issued	1997	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12432
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0008424644&partnerID=40&md5=cd8a347ded4e19216870eb43fdfa131e	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	ANGULAR-DISPERSION	en
dc.subject.other	HETEROSTRUCTURES	en
dc.subject.other	SPECTROSCOPY	en
dc.title	Selection rules of Raman scattering by optical phonons in strained cubic crystals	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1997	en
heal.abstract	Strain characterization of materials through Raman spectroscopy often requires the optical phonon wave vector to be in directions other than those of the strain-modified phonon eigenvectors. As a result, the observed mode frequencies are mixtures of the strain-modified eigenfrequencies. The selection rules for such generalized scattering configurations are derived here for the strained zincblende-diamond family crystals. The formulation is based on the relative magnitude of the LO-TO and the strain-induced splittings. The results are important for the analysis of strain-modified Raman lineshapes and of ''forbidden'' lines. Specific examples;are worked out in derail for externally stressed bulk crystals (90 degrees scattering geometry), and for [001], [111], and [110] strained heterojunctions (backscattering under oblique incidence and/or detection). (C) 1997 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.isi	ISI:A1997XQ79700012	en
dc.identifier.volume	82	en
dc.identifier.issue	4	en
dc.identifier.spage	1582	en
dc.identifier.epage	1591	en