Six-terminal MOSFET's: Modeling and applications in highly linear, electronically tunable resistors

Vavelidis, K; Tsividis, YP; Op't Eynde, F; Papananos, Y

dc.contributor.author	Vavelidis, K	en
dc.contributor.author	Tsividis, YP	en
dc.contributor.author	Op't Eynde, F	en
dc.contributor.author	Papananos, Y	en
dc.date.accessioned	2014-03-01T01:13:24Z
dc.date.available	2014-03-01T01:13:24Z
dc.date.issued	1997	en
dc.identifier.issn	0018-9200	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12446
dc.subject	Analog integrated circuits	en
dc.subject	BiCMOS analog integrated circuits	en
dc.subject	MOS devices	en
dc.subject	MOSFET linearization	en
dc.subject	Resistive gate/resistive body devices	en
dc.subject	Resistors	en
dc.subject	Six-terminal MOSFET's	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.other	Current voltage characteristics	en
dc.subject.other	Electric distortion	en
dc.subject.other	MOS devices	en
dc.subject.other	Resistors	en
dc.subject.other	Semiconductor device models	en
dc.subject.other	Semiconductor device structures	en
dc.subject.other	Electronically tunable resistors	en
dc.subject.other	Inversion models	en
dc.subject.other	MOSFET devices	en
dc.title	Six-terminal MOSFET's: Modeling and applications in highly linear, electronically tunable resistors	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/4.553170	en
heal.identifier.secondary	http://dx.doi.org/10.1109/4.553170	en
heal.language	English	en
heal.publicationDate	1997	en
heal.abstract	The electrical properties of a six-terminal MOSFET are studied and a strong-inversion model is derived. Due to its special structure, the six-terminal MOSFET can be operated as a highly-linear, electronically-tunable resistor. This is managed by applying proper voltages at the terminals of the structure, achieving channel uniformity independent of applied signals, Measurements on fabricated test devices yield distortion levels of -90 dB for 1 V-p-p signals.	en
heal.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC	en
heal.journalName	IEEE Journal of Solid-State Circuits	en
dc.identifier.doi	10.1109/4.553170	en
dc.identifier.isi	ISI:A1997WA65300002	en
dc.identifier.volume	32	en
dc.identifier.issue	1	en
dc.identifier.spage	4	en
dc.identifier.epage	11	en