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XRD and micro Raman characterization of epitaxial Bi-2201, Bi-2212 and Bi-2223 thin films

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dc.contributor.author Holiastou, M en
dc.contributor.author Poulakis, N en
dc.contributor.author Palles, D en
dc.contributor.author Liarokapis, E en
dc.contributor.author Niarchos, D en
dc.contributor.author Frey, U en
dc.contributor.author Adrian, H en
dc.date.accessioned 2014-03-01T01:13:30Z
dc.date.available 2014-03-01T01:13:30Z
dc.date.issued 1997 en
dc.identifier.issn 0921-4534 en
dc.identifier.uri http://hdl.handle.net/123456789/12521
dc.subject Raman Spectra en
dc.subject Single Crystal en
dc.subject Thin Film en
dc.subject X Rays en
dc.subject.classification Physics, Applied en
dc.subject.other Bismuth compounds en
dc.subject.other Epitaxial growth en
dc.subject.other High temperature superconductors en
dc.subject.other Oxide superconductors en
dc.subject.other Polarization en
dc.subject.other Raman spectroscopy en
dc.subject.other Single crystals en
dc.subject.other Sputtering en
dc.subject.other X ray crystallography en
dc.subject.other Bismuth strontium calcium copper oxide en
dc.subject.other Micro Raman spectroscopy en
dc.subject.other Superconducting films en
dc.title XRD and micro Raman characterization of epitaxial Bi-2201, Bi-2212 and Bi-2223 thin films en
heal.type journalArticle en
heal.identifier.primary 10.1016/S0921-4534(97)00386-9 en
heal.identifier.secondary http://dx.doi.org/10.1016/S0921-4534(97)00386-9 en
heal.language English en
heal.publicationDate 1997 en
heal.abstract Micro Raman characterization is performed on high quality thin films of Bi2Sr2CuO6+x (2201), Bi2Sr2CaCu2O8+x (2212), Bi2Sr2Ca2Cu3O10+x (2223) made by dc-sputtering. Single crystal x-ray measurements reveal the full epitaxy of the films, which allows for polarized Raman spectra to be obtained. en
heal.publisher ELSEVIER SCIENCE BV en
heal.journalName Physica C: Superconductivity and its Applications en
dc.identifier.doi 10.1016/S0921-4534(97)00386-9 en
dc.identifier.isi ISI:A1997XZ90500073 en
dc.identifier.volume 282-287 en
dc.identifier.issue PART 2 en
dc.identifier.spage 583 en
dc.identifier.epage 584 en


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