Heavy-ion induced damage of crystalline Ge and W in the 0.5-8 A MeV range

Huber, H; Assmann, W; Karamian, SA; Mieskes, HD; Nolte, H; Gazis, E; Kokkoris, M; Kossionides, S; Vlastou, R; Grotzschel, R; Mucklich, A; Prusseit, W

dc.contributor.author	Huber, H	en
dc.contributor.author	Assmann, W	en
dc.contributor.author	Karamian, SA	en
dc.contributor.author	Mieskes, HD	en
dc.contributor.author	Nolte, H	en
dc.contributor.author	Gazis, E	en
dc.contributor.author	Kokkoris, M	en
dc.contributor.author	Kossionides, S	en
dc.contributor.author	Vlastou, R	en
dc.contributor.author	Grotzschel, R	en
dc.contributor.author	Mucklich, A	en
dc.contributor.author	Prusseit, W	en
dc.date.accessioned	2014-03-01T01:13:47Z
dc.date.available	2014-03-01T01:13:47Z
dc.date.issued	1998	en
dc.identifier.issn	0168-583X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12722
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0032476990&partnerID=40&md5=e9d398ebea75584a308aeeade2c67b67	en
dc.subject	Channeling	en
dc.subject	Crystals	en
dc.subject	Damage	en
dc.subject	Swift heavy ions	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.classification	Nuclear Science & Technology	en
dc.subject.classification	Physics, Atomic, Molecular & Chemical	en
dc.subject.classification	Physics, Nuclear	en
dc.subject.other	IRRADIATION	en
dc.subject.other	GERMANIUM	en
dc.title	Heavy-ion induced damage of crystalline Ge and W in the 0.5-8 A MeV range	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1998	en
heal.abstract	High energy heavy-ion induced damage of Ge and W crystals was studied by blocking and channeling. Beams of ions from C to Au with energies from 12 to 266 MeV were used both for damaging the crystal and for ""in-situ"" measurement of lattice disordering. The blocking minimum yield and angular half-width have been measured as a function of dose, and it is shown that the relative ion damaging efficiency for Ge decreases at high electronic energy-loss values. The mechanism of microannealing along the ion path is discussed. The saturation and dose-rate dependence of damage are explained in terms of defect mobility and recombination processes. For a W crystal the initial damaging power is proportional to the number of displacements predicted by TRIM and a disorder saturation is observed at high doses. © 1998 Elsevier Science B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	en
dc.identifier.isi	ISI:000077719400048	en
dc.identifier.volume	146	en
dc.identifier.issue	1-4	en
dc.identifier.spage	309	en
dc.identifier.epage	316	en