High-pressure studies of photoluminescence in porous silicon

Papadimitriou, D; Raptis, YS; Nassiopoulou, AG

dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Nassiopoulou, AG	en
dc.date.accessioned	2014-03-01T01:13:47Z
dc.date.available	2014-03-01T01:13:47Z
dc.date.issued	1998	en
dc.identifier.issn	0163-1829	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12728
dc.subject	High Pressure	en
dc.subject	Porous Silicon	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	HYDROSTATIC-PRESSURE	en
dc.subject.other	LUMINESCENCE	en
dc.subject.other	SHAPE	en
dc.title	High-pressure studies of photoluminescence in porous silicon	en
heal.type	journalArticle	en
heal.identifier.primary	10.1103/PhysRevB.58.14089	en
heal.identifier.secondary	http://dx.doi.org/10.1103/PhysRevB.58.14089	en
heal.language	English	en
heal.publicationDate	1998	en
heal.abstract	Raman scattering and photoluminescence measurements performed on porous silicon at high hydrostatic pressures up to 21 GPa indicate that the phase-transition pressure in this material is porosity dependent and much higher than in bulk crystalline silicon. For porosities higher than 80% the phase transition occurs at 18 GPa followed by unrecoverable suppression of both Raman and luminescence activity. The obtained results are consistent with the quantum-confinement model. [S0163-1829(98)02745-3].	en
heal.publisher	AMERICAN PHYSICAL SOC	en
heal.journalName	Physical Review B - Condensed Matter and Materials Physics	en
dc.identifier.doi	10.1103/PhysRevB.58.14089	en
dc.identifier.isi	ISI:000077328000001	en
dc.identifier.volume	58	en
dc.identifier.issue	21	en
dc.identifier.spage	14089	en
dc.identifier.epage	14093	en