Ion irradiation induced defects in epitaxial GaAs layers

Arpatzanis, N; Vlastou, R; Konstantinidis, G; Assmann, W; Papastamatiou, M; Gazis, E; Papaioannou, GJ

dc.contributor.author	Arpatzanis, N	en
dc.contributor.author	Vlastou, R	en
dc.contributor.author	Konstantinidis, G	en
dc.contributor.author	Assmann, W	en
dc.contributor.author	Papastamatiou, M	en
dc.contributor.author	Gazis, E	en
dc.contributor.author	Papaioannou, GJ	en
dc.date.accessioned	2014-03-01T01:13:51Z
dc.date.available	2014-03-01T01:13:51Z
dc.date.issued	1998	en
dc.identifier.issn	0038-1101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12751
dc.subject	Heavy Ions	en
dc.subject	Ion Beam	en
dc.subject	Ion Irradiation	en
dc.subject	Kinetics	en
dc.subject	Molecular Beam Epitaxy	en
dc.subject	First Order	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Alpha particles	en
dc.subject.other	Annealing	en
dc.subject.other	Charge transfer	en
dc.subject.other	Crystal defects	en
dc.subject.other	Electron energy levels	en
dc.subject.other	Epitaxial growth	en
dc.subject.other	Heavy ions	en
dc.subject.other	Ion beams	en
dc.subject.other	Ion bombardment	en
dc.subject.other	Molecular beam epitaxy	en
dc.subject.other	Reaction kinetics	en
dc.subject.other	Arrhenius signature	en
dc.subject.other	Deep levels	en
dc.subject.other	Heavy ion irradiation	en
dc.subject.other	Pair recombination	en
dc.subject.other	Semiconducting gallium arsenide	en
dc.title	Ion irradiation induced defects in epitaxial GaAs layers	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0038-1101(97)00221-9	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0038-1101(97)00221-9	en
heal.language	English	en
heal.publicationDate	1998	en
heal.abstract	We have investigated the effects of heavy ion irradiation on n-type GaAs layers, grown by molecular beam epitaxy (MBE). The ion beam we have used concerns protons (1 MeV), alpha particles (5.4 MeV), oxygen (25 MeV), iodine (200 MeV) and gold (253 MeV). The total fluence for each beam was 8 x 10(13), 1.9 x 10(12), 10(10), 10(9), 1.2 x 10(6) cm(-2), respectively. The induced damage is via displacement. Up to six different groups of deep levels were induced but in the case of heavy ions, as for instance iodine and gold they were not well resolved. Identification of the induced deep levels was attempted by comparing their Arrhenius signature with those of known levels, cited in the literature. Annealing experiments were also carried out and we have found that some of the defects recover at about 470 degrees K (200 degrees C). The annealing kinetics is first order, which means that the recovery mechanism is by close pair recombination rather than diffusion. (C) 1998 Elsevier Science Ltd. All rights reserved.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid-State Electronics	en
dc.identifier.doi	10.1016/S0038-1101(97)00221-9	en
dc.identifier.isi	ISI:000072877100016	en
dc.identifier.volume	42	en
dc.identifier.issue	2	en
dc.identifier.spage	277	en
dc.identifier.epage	282	en