dc.contributor.author |
Tigelis, IG |
en |
dc.contributor.author |
Xanthakis, JP |
en |
dc.contributor.author |
Vomvoridis, JL |
en |
dc.date.accessioned |
2014-03-01T01:13:53Z |
|
dc.date.available |
2014-03-01T01:13:53Z |
|
dc.date.issued |
1998 |
en |
dc.identifier.issn |
0031-8965 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/12761 |
|
dc.subject |
Porous Silicon |
en |
dc.subject.classification |
Materials Science, Multidisciplinary |
en |
dc.subject.classification |
Physics, Applied |
en |
dc.subject.classification |
Physics, Condensed Matter |
en |
dc.subject.other |
Boundary conditions |
en |
dc.subject.other |
Electron transport properties |
en |
dc.subject.other |
Energy gap |
en |
dc.subject.other |
Luminescence of solids |
en |
dc.subject.other |
Effective mass theory (EMT) |
en |
dc.subject.other |
Electron localization |
en |
dc.subject.other |
Porous silicon |
en |
dc.title |
Localisation of electrons in wire-like porous silicon |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1002/(SICI)1521-396X(199801)165:1<125::AID-PSSA125>3.0.CO;2-9 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1002/(SICI)1521-396X(199801)165:1<125::AID-PSSA125>3.0.CO;2-9 |
en |
heal.language |
English |
en |
heal.publicationDate |
1998 |
en |
heal.abstract |
We investigate the possible localisation of electrons in wire-like porous Si (H-passivated Si), which can come from the undulation of the wire diameter from 20 to 40 Angstrom over a length of 40 Angstrom. We use the Effective Mass Theory (EMT) and to simulate the "bumpy" wire we employ a supercell composed of concentric cylinders with random diameters and periodic boundary conditions at its ends. We find that the low-lying states are localised inside particular cylinders of the supercell whereas further up - typically a few tenths of eV higher - one finds states extending through the whole of the wire. Our results support the model of luminescence from bulk states irrespective of the character of the band gap and can explain the constancy of the mobility with temperature and also the smooth transition of the luminescence spectrum from wire-like to dot-like structures. |
en |
heal.publisher |
WILEY-V C H VERLAG GMBH |
en |
heal.journalName |
Physica Status Solidi (A) Applied Research |
en |
dc.identifier.doi |
10.1002/(SICI)1521-396X(199801)165:1<125::AID-PSSA125>3.0.CO;2-9 |
en |
dc.identifier.isi |
ISI:000071976700019 |
en |
dc.identifier.volume |
165 |
en |
dc.identifier.issue |
1 |
en |
dc.identifier.spage |
125 |
en |
dc.identifier.epage |
129 |
en |