Micro-raman characterization of stress distribution within free standing mono- and poly-crystalline silicon membranes

Siakavellas, M; Anastassakis, E; Kaltsas, G; Nassiopoulos, AG

dc.contributor.author	Siakavellas, M	en
dc.contributor.author	Anastassakis, E	en
dc.contributor.author	Kaltsas, G	en
dc.contributor.author	Nassiopoulos, AG	en
dc.date.accessioned	2014-03-01T01:13:54Z
dc.date.available	2014-03-01T01:13:54Z
dc.date.issued	1998	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12775
dc.subject	Polycrystalline Silicon	en
dc.subject	Porous Silicon	en
dc.subject	Raman Spectroscopy	en
dc.subject	Stress Distribution	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Crystalline materials	en
dc.subject.other	Mechanical properties	en
dc.subject.other	Membranes	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Silicon	en
dc.subject.other	Stresses	en
dc.subject.other	Free standing polycrystalline cantilever	en
dc.subject.other	Composite micromechanics	en
dc.title	Micro-raman characterization of stress distribution within free standing mono- and poly-crystalline silicon membranes	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(98)00109-9	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(98)00109-9	en
heal.language	English	en
heal.publicationDate	1998	en
heal.abstract	Stress measurements were performed in a free standing monocrystalline cantilever and a polycrystalline silicon membrane suspended over a deep cavity, using micro-Raman spectroscopy. These micromechanical structures were fabricated using porous silicon as a sacrificial layer. The results show that the stress varies across the membrane and the cantilever, the level of stress in the latter being lower than in the membrane.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(98)00109-9	en
dc.identifier.isi	ISI:000073284600109	en
dc.identifier.volume	41-42	en
dc.identifier.spage	469	en
dc.identifier.epage	472	en