On the structural stability of amorphous Se/CdSe multilayers: A Raman study

Nesheva, D; Kotsalas, IP; Raptis, C; Vateva, E

dc.contributor.author	Nesheva, D	en
dc.contributor.author	Kotsalas, IP	en
dc.contributor.author	Raptis, C	en
dc.contributor.author	Vateva, E	en
dc.date.accessioned	2014-03-01T01:13:58Z
dc.date.available	2014-03-01T01:13:58Z
dc.date.issued	1998	en
dc.identifier.issn	0022-3093	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12818
dc.subject	Low Temperature	en
dc.subject	Power Density	en
dc.subject	Raman Spectra	en
dc.subject	Structural Stability	en
dc.subject	Thermal Annealing	en
dc.subject	Thermal Effects	en
dc.subject.classification	Materials Science, Ceramics	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.other	Amorphous materials	en
dc.subject.other	Annealing	en
dc.subject.other	Cadmium compounds	en
dc.subject.other	Crystallization	en
dc.subject.other	Interfaces (materials)	en
dc.subject.other	Laser beam effects	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Selenium	en
dc.subject.other	Thermal effects	en
dc.subject.other	Amorphous multilayers (AML)	en
dc.subject.other	Structural stability	en
dc.subject.other	Multilayers	en
dc.title	On the structural stability of amorphous Se/CdSe multilayers: A Raman study	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0022-3093(97)00464-X	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0022-3093(97)00464-X	en
heal.language	English	en
heal.publicationDate	1998	en
heal.abstract	The effects of thermal annealing and laser beam illumination on the structure of amorphous Se/CdSe multilayers of up to 20 periods and various sublayer thicknesses (3.5, 5, 6.5 and 10 nm) have been studied by measuring the higher frequency (vibrational) Raman spectra. Three Raman bands have been observed in this spectral region at 209 cm(-1) (CdSe), 237 cm(-1) (Se) and 256 cm(-1) (Se). After annealing, the intensity of these bands increases for all amorphous multilayers (AML) samples which, in a fil st approach, indicates an improvement of interface quality. In AML of thin (< 5 nm) sublayers, annealing results in an increased ordering of both Se and CdSe sublayers, while in AML of thicker (> 5 nm) sublayers the opposite effect is concluded for Sr sublayers, and hardly any change for CdSe ones. A gradual increase of laser power density causes a likewise modification of Raman spectra, which is attributed to crystallization of Se sublayers; in similar low temperature (25 K) experiments (using even higher laser power densities) there is no indication of substantial crystallization, implying that the latter is mainly a thermal effect. From the threshold for crystallization, we observed that the structural stability of Se/CdSe AML is better, the smaller the sublayer thickness, an important result for electrophotographic applications. (C) 1998 Elsevier Science B.V.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Journal of Non-Crystalline Solids	en
dc.identifier.doi	10.1016/S0022-3093(97)00464-X	en
dc.identifier.isi	ISI:000073426200010	en
dc.identifier.volume	224	en
dc.identifier.issue	3	en
dc.identifier.spage	283	en
dc.identifier.epage	290	en