Optimization of SPICE system LEVEL3 MOSFET transistor models based on dc measurements

Melikian, V; Mnatsakanian, V; Uzunoglou, N

dc.contributor.author	Melikian, V	en
dc.contributor.author	Mnatsakanian, V	en
dc.contributor.author	Uzunoglou, N	en
dc.date.accessioned	2014-03-01T01:13:58Z
dc.date.available	2014-03-01T01:13:58Z
dc.date.issued	1998	en
dc.identifier.issn	0026-2692	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12821
dc.subject	Objective Function	en
dc.subject	Parameter Extraction	en
dc.subject	Semiconductor Devices	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.other	Computer simulation	en
dc.subject.other	Computer software	en
dc.subject.other	Iterative methods	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Optimization	en
dc.subject.other	Semiconductor device parameter extraction	en
dc.subject.other	Software Package SPICE	en
dc.subject.other	Semiconductor device models	en
dc.title	Optimization of SPICE system LEVEL3 MOSFET transistor models based on dc measurements	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0026-2692(97)00081-5	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0026-2692(97)00081-5	en
heal.language	English	en
heal.publicationDate	1998	en
heal.abstract	This paper presents an efficient and reliable method for general semiconductor device parameter extraction. The basic principle of SPICE system LEVEL3 MOS transistor model parameters is considered which is based on iterative specifications. The parameter extraction technique consists of minimization of an objective function. Various strategies are proposed to make the parameter extraction task more efficient and accurate. According to the proposed technique, a model-independent parameter extraction program was implemented and highly satisfactory results were obtained. (C) 1998 Published by Elsevier Science Ltd.	en
heal.publisher	ELSEVIER ADVANCED TECHNOLOGY	en
heal.journalName	Microelectronics Journal	en
dc.identifier.doi	10.1016/S0026-2692(97)00081-5	en
dc.identifier.isi	ISI:000071999100010	en
dc.identifier.volume	29	en
dc.identifier.issue	3	en
dc.identifier.spage	151	en
dc.identifier.epage	156	en