Si1-x Gex structures fabricated by focused ion beam implantation

Ganetsos, Th; Tsamakis, D; Panknin, D; Mair, GLR; Teichert, J; Bischoff, L; Aidinis, C

dc.contributor.author	Ganetsos, Th	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Panknin, D	en
dc.contributor.author	Mair, GLR	en
dc.contributor.author	Teichert, J	en
dc.contributor.author	Bischoff, L	en
dc.contributor.author	Aidinis, C	en
dc.date.accessioned	2014-03-01T01:14:09Z
dc.date.available	2014-03-01T01:14:09Z
dc.date.issued	1998	en
dc.identifier.issn	1155-4339	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12892
dc.subject	Focused Ion Beam	en
dc.subject.classification	Physics, Multidisciplinary	en
dc.subject.other	SILICON	en
dc.subject.other	EPITAXY	en
dc.subject.other	GROWTH	en
dc.title	Si1-x Gex structures fabricated by focused ion beam implantation	en
heal.type	journalArticle	en
heal.identifier.primary	10.1051/jp4:1998325	en
heal.identifier.secondary	http://dx.doi.org/10.1051/jp4:1998325	en
heal.language	English	en
heal.publicationDate	1998	en
heal.abstract	In this work we present a study of the spreading resistance for Si1-xGex structures fabricated by F.I.B - L.M.I.S. technique . Maskless ion implantation using a Focused Ion Beam has the advantages of high resolution , the possibility to vary dose, energy and pattern design within a chip or within a structure.	en
heal.publisher	E D P SCIENCES	en
heal.journalName	Journal De Physique. IV : JP	en
dc.identifier.doi	10.1051/jp4:1998325	en
dc.identifier.isi	ISI:000074756500026	en
dc.identifier.volume	8	en
dc.identifier.issue	3	en
dc.identifier.spage	Pr3	en
dc.identifier.epage	109-Pr3-112	en