dc.contributor.author |
Tegou, E |
en |
dc.contributor.author |
Gogolides, E |
en |
dc.contributor.author |
Argitis, P |
en |
dc.contributor.author |
Boudouvis, A |
en |
dc.contributor.author |
Hatzakis, M |
en |
dc.date.accessioned |
2014-03-01T01:14:09Z |
|
dc.date.available |
2014-03-01T01:14:09Z |
|
dc.date.issued |
1998 |
en |
dc.identifier.issn |
0167-9317 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/12893 |
|
dc.subject |
Image Processing |
en |
dc.subject |
Laser Interferometry |
en |
dc.subject |
Process Development |
en |
dc.subject |
Ultra Violet |
en |
dc.subject.classification |
Engineering, Electrical & Electronic |
en |
dc.subject.classification |
Nanoscience & Nanotechnology |
en |
dc.subject.classification |
Optics |
en |
dc.subject.classification |
Physics, Applied |
en |
dc.subject.other |
Electron beams |
en |
dc.subject.other |
Epoxy resins |
en |
dc.subject.other |
Fourier transform infrared spectroscopy |
en |
dc.subject.other |
Interferometry |
en |
dc.subject.other |
Lithography |
en |
dc.subject.other |
Silicon |
en |
dc.subject.other |
Ultraviolet radiation |
en |
dc.subject.other |
Silylation |
en |
dc.subject.other |
Photoresists |
en |
dc.title |
Silylation of epoxy functionalised photoresists for optical, E - beam lithography and micromachining applications |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1016/S0167-9317(98)00077-X |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1016/S0167-9317(98)00077-X |
en |
heal.language |
English |
en |
heal.publicationDate |
1998 |
en |
heal.abstract |
A near surface imaging process is developed for epoxy novolac photoresists using wet silylation and oxygen plasma development. The process is also suitable for gas phase silylation. Dimethyl dichloro silane (DMDCS) and chlorosilanes in general are used as silylating agents. The effective silicon incorporation is determined by FT-IR and laser interferometry. Resist formulation is optimized for dry development, the parameters affecting the resist profile are adjusted and process development is done using deep ultra violet (DUV) contact printing. |
en |
heal.publisher |
ELSEVIER SCIENCE BV |
en |
heal.journalName |
Microelectronic Engineering |
en |
dc.identifier.doi |
10.1016/S0167-9317(98)00077-X |
en |
dc.identifier.isi |
ISI:000073284600077 |
en |
dc.identifier.volume |
41-42 |
en |
dc.identifier.spage |
335 |
en |
dc.identifier.epage |
338 |
en |