Stable visible photo- and electroluminescence from nanocrystalline silicon thin films fabricated on thin SiO2 layers by low pressure chemical vapour deposition

Nassiopoulou, AG; Ioannou-Sougleridis, V; Photopoulos, P; Travlos, A; Tsakiri, V; Papadimitriou, D

dc.contributor.author	Nassiopoulou, AG	en
dc.contributor.author	Ioannou-Sougleridis, V	en
dc.contributor.author	Photopoulos, P	en
dc.contributor.author	Travlos, A	en
dc.contributor.author	Tsakiri, V	en
dc.contributor.author	Papadimitriou, D	en
dc.date.accessioned	2014-03-01T01:14:11Z
dc.date.available	2014-03-01T01:14:11Z
dc.date.issued	1998	en
dc.identifier.issn	0031-8965	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12911
dc.subject	Electroluminescence	en
dc.subject	Thin Film	en
dc.subject	Low Pressure Chemical Vapour Deposition	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Capacitance measurement	en
dc.subject.other	Chemical vapor deposition	en
dc.subject.other	Current voltage characteristics	en
dc.subject.other	Electroluminescence	en
dc.subject.other	Film preparation	en
dc.subject.other	Nanostructured materials	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Silica	en
dc.subject.other	Thermooxidation	en
dc.subject.other	Thin films	en
dc.subject.other	Voltage measurement	en
dc.subject.other	Low pressure chemical vapor deposition (LPCVD)	en
dc.subject.other	Semiconducting films	en
dc.title	Stable visible photo- and electroluminescence from nanocrystalline silicon thin films fabricated on thin SiO2 layers by low pressure chemical vapour deposition	en
heal.type	journalArticle	en
heal.identifier.primary	10.1002/(SICI)1521-396X(199801)165:1<79::AID-PSSA79>3.3.CO;2-6	en
heal.identifier.secondary	http://dx.doi.org/10.1002/(SICI)1521-396X(199801)165:1<79::AID-PSSA79>3.3.CO;2-6	en
heal.language	English	en
heal.publicationDate	1998	en
heal.abstract	Nanocrystalline silicon thin films were deposited on thin SiO2 layers by low pressure chemical vapour deposition (LPCVD) at temperatures between 580 and 610 degrees C. The layer thickness was between 15 and 30 nm. The silicon dioxide layer of thickness between 5 and 20 nm was thermally grown on silicon by high temperature thermal oxidation. Photoluminescence (PL) spectra excited by the 488 nm argon ion laser line showed two different emission bands, one present in all luminescent samples and centered between 500 and 600 nm and the other between 700 and 800 nm which was obtained only for some samples. Stable electroluminescent devices were obtained. their electrical characteristics being dominated by the presence and quality of the oxide layer. Results on I-V and C-V measurements will be reported and device performance will be discussed.	en
heal.publisher	WILEY-V C H VERLAG GMBH	en
heal.journalName	Physica Status Solidi (A) Applied Research	en
dc.identifier.doi	10.1002/(SICI)1521-396X(199801)165:1<79::AID-PSSA79>3.3.CO;2-6	en
dc.identifier.isi	ISI:000071976700012	en
dc.identifier.volume	165	en
dc.identifier.issue	1	en
dc.identifier.spage	79	en
dc.identifier.epage	85	en