Stress effect on suspended polycrystalline silicon membranes fabricated by micromachining of porous silicon

Kaltsas, G; Nassiopoulou, AG; Siakavellas, M; Anastassakis, E

dc.contributor.author	Kaltsas, G	en
dc.contributor.author	Nassiopoulou, AG	en
dc.contributor.author	Siakavellas, M	en
dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:14:12Z
dc.date.available	2014-03-01T01:14:12Z
dc.date.issued	1998	en
dc.identifier.issn	0924-4247	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/12917
dc.subject	Micromachining	en
dc.subject	Porous silicon	en
dc.subject	Stress effect	en
dc.subject	Suspended membranes	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.other	POLYSILICON	en
dc.subject.other	STRAIN	en
dc.subject.other	FILMS	en
dc.title	Stress effect on suspended polycrystalline silicon membranes fabricated by micromachining of porous silicon	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0924-4247(98)00063-6	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0924-4247(98)00063-6	en
heal.language	English	en
heal.publicationDate	1998	en
heal.abstract	Large polycrystalline silicon membranes in the form of bridges suspended over deep monocrystalline silicon cavities have been fabricated by using porous silicon as a sacrificial layer. Stresses within the free-standing membranes as well as within supported polycrystalline membranes (pads) are measured through micro-Raman spectroscopy and a different model is used in each case in order to calculate the stresses from the observed Raman shifts. A detailed study of stress distribution along the membranes and pads has been performed, as a function of thickness and annealing treatment. The stress profiles reveal variations in stress along the membranes and pads. (C) 1998 Elsevier Science S.A. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Sensors and Actuators, A: Physical	en
dc.identifier.doi	10.1016/S0924-4247(98)00063-6	en
dc.identifier.isi	ISI:000074456900038	en
dc.identifier.volume	68	en
dc.identifier.issue	1-3	en
dc.identifier.spage	429	en
dc.identifier.epage	434	en