dc.contributor.author |
Xanthakis, JP |
en |
dc.contributor.author |
Modinos, A |
en |
dc.date.accessioned |
2014-03-01T01:14:22Z |
|
dc.date.available |
2014-03-01T01:14:22Z |
|
dc.date.issued |
1999 |
en |
dc.identifier.issn |
0925-9635 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/13022 |
|
dc.subject |
Carbon nitride |
en |
dc.subject |
DOS |
en |
dc.subject |
Electronic structure |
en |
dc.subject |
Field emission |
en |
dc.subject |
Flat-panel displays |
en |
dc.subject.classification |
Materials Science, Multidisciplinary |
en |
dc.subject.other |
Composition effects |
en |
dc.subject.other |
Electric currents |
en |
dc.subject.other |
Electric field effects |
en |
dc.subject.other |
Electron emission |
en |
dc.subject.other |
Electronic structure |
en |
dc.subject.other |
Energy gap |
en |
dc.subject.other |
Flat panel displays |
en |
dc.subject.other |
Mathematical models |
en |
dc.subject.other |
Nitrides |
en |
dc.subject.other |
Nitrogen |
en |
dc.subject.other |
Carbon nitride |
en |
dc.subject.other |
Field electron emission (FEE) |
en |
dc.subject.other |
Amorphous films |
en |
dc.title |
A theoretical model of electron emission from amorphous carbon nitride films |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1016/S0925-9635(98)00331-8 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1016/S0925-9635(98)00331-8 |
en |
heal.language |
English |
en |
heal.publicationDate |
1999 |
en |
heal.abstract |
We propose a model of field electron emission from amorphous carbon nitride films. The model is based on a semi-empirical electronic structure calculation and standard formulae for emission from semiconductors, appropriately modified. According to this model, emission occurs at protrusions of the film surface. Most of the emitted electrons come fi om the gap states not the conduction band. The model reproduces reasonably well the observed variation of the emitted current with the electric field and with the nitrogen concentration. (C) 1999 Published by Elsevier Science S.A. All rights reserved. |
en |
heal.publisher |
ELSEVIER SCIENCE SA |
en |
heal.journalName |
Diamond and Related Materials |
en |
dc.identifier.doi |
10.1016/S0925-9635(98)00331-8 |
en |
dc.identifier.isi |
ISI:000080437000134 |
en |
dc.identifier.volume |
8 |
en |
dc.identifier.issue |
2-5 |
en |
dc.identifier.spage |
798 |
en |
dc.identifier.epage |
800 |
en |