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A theoretical model of electron emission from amorphous carbon nitride films

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dc.contributor.author Xanthakis, JP en
dc.contributor.author Modinos, A en
dc.date.accessioned 2014-03-01T01:14:22Z
dc.date.available 2014-03-01T01:14:22Z
dc.date.issued 1999 en
dc.identifier.issn 0925-9635 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/13022
dc.subject Carbon nitride en
dc.subject DOS en
dc.subject Electronic structure en
dc.subject Field emission en
dc.subject Flat-panel displays en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.other Composition effects en
dc.subject.other Electric currents en
dc.subject.other Electric field effects en
dc.subject.other Electron emission en
dc.subject.other Electronic structure en
dc.subject.other Energy gap en
dc.subject.other Flat panel displays en
dc.subject.other Mathematical models en
dc.subject.other Nitrides en
dc.subject.other Nitrogen en
dc.subject.other Carbon nitride en
dc.subject.other Field electron emission (FEE) en
dc.subject.other Amorphous films en
dc.title A theoretical model of electron emission from amorphous carbon nitride films en
heal.type journalArticle en
heal.identifier.primary 10.1016/S0925-9635(98)00331-8 en
heal.identifier.secondary http://dx.doi.org/10.1016/S0925-9635(98)00331-8 en
heal.language English en
heal.publicationDate 1999 en
heal.abstract We propose a model of field electron emission from amorphous carbon nitride films. The model is based on a semi-empirical electronic structure calculation and standard formulae for emission from semiconductors, appropriately modified. According to this model, emission occurs at protrusions of the film surface. Most of the emitted electrons come fi om the gap states not the conduction band. The model reproduces reasonably well the observed variation of the emitted current with the electric field and with the nitrogen concentration. (C) 1999 Published by Elsevier Science S.A. All rights reserved. en
heal.publisher ELSEVIER SCIENCE SA en
heal.journalName Diamond and Related Materials en
dc.identifier.doi 10.1016/S0925-9635(98)00331-8 en
dc.identifier.isi ISI:000080437000134 en
dc.identifier.volume 8 en
dc.identifier.issue 2-5 en
dc.identifier.spage 798 en
dc.identifier.epage 800 en


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