Breakdown of donor localized states on the insulating side of strain-induced MI transitions in Si and Ge

Budzulyak, SI; Dotsenko, JP; Gorin, AE; Kolomoets, VV; Machulin, VF; Ermakov, VN; Venger, EF; Liarokapis, E; Tunstall, DP

dc.contributor.author	Budzulyak, SI	en
dc.contributor.author	Dotsenko, JP	en
dc.contributor.author	Gorin, AE	en
dc.contributor.author	Kolomoets, VV	en
dc.contributor.author	Machulin, VF	en
dc.contributor.author	Ermakov, VN	en
dc.contributor.author	Venger, EF	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Tunstall, DP	en
dc.date.accessioned	2014-03-01T01:14:26Z
dc.date.available	2014-03-01T01:14:26Z
dc.date.issued	1999	en
dc.identifier.issn	0370-1972	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13068
dc.subject	Localized State	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	CONDUCTIVITY	en
dc.title	Breakdown of donor localized states on the insulating side of strain-induced MI transitions in Si and Ge	en
heal.type	journalArticle	en
heal.identifier.primary	10.1002/(SICI)1521-3951(199901)211:1<137::AID-PSSB137>3.0.CO;2-#	en
heal.identifier.secondary	http://dx.doi.org/10.1002/(SICI)1521-3951(199901)211:1<137::AID-PSSB137>3.0.CO;2-#	en
heal.language	English	en
heal.publicationDate	1999	en
heal.abstract	Localization of electrons on hydrogenic impurity atoms in Si and Ge and their delocalization by electric field breakdown of the localized states were examined on the insulating side of a strain-induced metal-nonmetal transition. Both nonlinear and linear dependencies of the breakdown field on activation energy were obtained. Experimental results were explained taking into account a crucial transformation of silicon and germanium conduction band structure under extremely high uniaxial pressure.	en
heal.publisher	WILEY-V C H VERLAG GMBH	en
heal.journalName	PHYSICA STATUS SOLIDI B-BASIC RESEARCH	en
dc.identifier.doi	10.1002/(SICI)1521-3951(199901)211:1<137::AID-PSSB137>3.0.CO;2-#	en
dc.identifier.isi	ISI:000078185000024	en
dc.identifier.volume	211	en
dc.identifier.issue	1	en
dc.identifier.spage	137	en
dc.identifier.epage	142	en