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Breakdown of donor localized states on the insulating side of strain-induced MI transitions in Si and Ge

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dc.contributor.author Budzulyak, SI en
dc.contributor.author Dotsenko, JP en
dc.contributor.author Gorin, AE en
dc.contributor.author Kolomoets, VV en
dc.contributor.author Machulin, VF en
dc.contributor.author Ermakov, VN en
dc.contributor.author Venger, EF en
dc.contributor.author Liarokapis, E en
dc.contributor.author Tunstall, DP en
dc.date.accessioned 2014-03-01T01:14:26Z
dc.date.available 2014-03-01T01:14:26Z
dc.date.issued 1999 en
dc.identifier.issn 0370-1972 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/13068
dc.subject Localized State en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other CONDUCTIVITY en
dc.title Breakdown of donor localized states on the insulating side of strain-induced MI transitions in Si and Ge en
heal.type journalArticle en
heal.identifier.primary 10.1002/(SICI)1521-3951(199901)211:1<137::AID-PSSB137>3.0.CO;2-# en
heal.identifier.secondary http://dx.doi.org/10.1002/(SICI)1521-3951(199901)211:1<137::AID-PSSB137>3.0.CO;2-# en
heal.language English en
heal.publicationDate 1999 en
heal.abstract Localization of electrons on hydrogenic impurity atoms in Si and Ge and their delocalization by electric field breakdown of the localized states were examined on the insulating side of a strain-induced metal-nonmetal transition. Both nonlinear and linear dependencies of the breakdown field on activation energy were obtained. Experimental results were explained taking into account a crucial transformation of silicon and germanium conduction band structure under extremely high uniaxial pressure. en
heal.publisher WILEY-V C H VERLAG GMBH en
heal.journalName PHYSICA STATUS SOLIDI B-BASIC RESEARCH en
dc.identifier.doi 10.1002/(SICI)1521-3951(199901)211:1<137::AID-PSSB137>3.0.CO;2-# en
dc.identifier.isi ISI:000078185000024 en
dc.identifier.volume 211 en
dc.identifier.issue 1 en
dc.identifier.spage 137 en
dc.identifier.epage 142 en


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