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Photoluminescence of CdSe nanocrystals embedded in a SiOx thin film matrix

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dc.contributor.author Nesheva, D en
dc.contributor.author Raptis, C en
dc.contributor.author Levi, Z en
dc.contributor.author Popovic, Z en
dc.contributor.author Hinic, I en
dc.date.accessioned 2014-03-01T01:15:03Z
dc.date.available 2014-03-01T01:15:03Z
dc.date.issued 1999 en
dc.identifier.issn 0022-2313 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/13310
dc.subject photoluminescence en
dc.subject nanocrystals en
dc.subject thin films en
dc.subject defect states en
dc.subject vacuum deposition en
dc.subject CdSe nanocrystals en
dc.subject SiOx glassy matrix en
dc.subject.classification Optics en
dc.subject.other Absorption spectroscopy en
dc.subject.other Crystal defects en
dc.subject.other Deposition en
dc.subject.other Electron energy levels en
dc.subject.other Energy gap en
dc.subject.other Nanostructured materials en
dc.subject.other Semiconducting cadmium compounds en
dc.subject.other Silica en
dc.subject.other Thin films en
dc.subject.other Vacuum applications en
dc.subject.other Cadmium selenide en
dc.subject.other Vacuum deposition en
dc.subject.other Photoluminescence en
dc.title Photoluminescence of CdSe nanocrystals embedded in a SiOx thin film matrix en
heal.type journalArticle en
heal.identifier.primary 10.1016/S0022-2313(99)00043-5 en
heal.identifier.secondary http://dx.doi.org/10.1016/S0022-2313(99)00043-5 en
heal.language English en
heal.publicationDate 1999 en
heal.abstract Room- and low-temperature photoluminescence studies are reported on CdSe nanocrystals embedded in an SiOx thin film matrix. The main spectral feature for all samples and both temperatures is a broad band whose position does not change considerably with nanocrystallite size. The band is assigned to recombination through defect states, whose energy depends on the nanocrystallite size in such a way that they counter-balance the similar dependence of the optical band gap on the nanocrystallite size. A noticeable asymmetry on the low-energy side of this band at low temperatures is attributed to the existence of a variety of surface defect states and/or a large number of volume defect states in these nanocrystals. There is evidence to suggest that the energy band diagram of CdSe nanocrystals in SiOx matrix is considerably different from that of SiOx/CdSe multi-quantum wells. (C) 1999 Elsevier Science B.V. All rights reserved. en
heal.publisher Elsevier Science Publishers B.V., Amsterdam, Netherlands en
heal.journalName Journal of Luminescence en
dc.identifier.doi 10.1016/S0022-2313(99)00043-5 en
dc.identifier.isi ISI:000081962700007 en
dc.identifier.volume 82 en
dc.identifier.issue 3 en
dc.identifier.spage 233 en
dc.identifier.epage 240 en


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