dc.contributor.author |
Nesheva, D |
en |
dc.contributor.author |
Raptis, C |
en |
dc.contributor.author |
Levi, Z |
en |
dc.contributor.author |
Popovic, Z |
en |
dc.contributor.author |
Hinic, I |
en |
dc.date.accessioned |
2014-03-01T01:15:03Z |
|
dc.date.available |
2014-03-01T01:15:03Z |
|
dc.date.issued |
1999 |
en |
dc.identifier.issn |
0022-2313 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/13310 |
|
dc.subject |
photoluminescence |
en |
dc.subject |
nanocrystals |
en |
dc.subject |
thin films |
en |
dc.subject |
defect states |
en |
dc.subject |
vacuum deposition |
en |
dc.subject |
CdSe nanocrystals |
en |
dc.subject |
SiOx glassy matrix |
en |
dc.subject.classification |
Optics |
en |
dc.subject.other |
Absorption spectroscopy |
en |
dc.subject.other |
Crystal defects |
en |
dc.subject.other |
Deposition |
en |
dc.subject.other |
Electron energy levels |
en |
dc.subject.other |
Energy gap |
en |
dc.subject.other |
Nanostructured materials |
en |
dc.subject.other |
Semiconducting cadmium compounds |
en |
dc.subject.other |
Silica |
en |
dc.subject.other |
Thin films |
en |
dc.subject.other |
Vacuum applications |
en |
dc.subject.other |
Cadmium selenide |
en |
dc.subject.other |
Vacuum deposition |
en |
dc.subject.other |
Photoluminescence |
en |
dc.title |
Photoluminescence of CdSe nanocrystals embedded in a SiOx thin film matrix |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1016/S0022-2313(99)00043-5 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1016/S0022-2313(99)00043-5 |
en |
heal.language |
English |
en |
heal.publicationDate |
1999 |
en |
heal.abstract |
Room- and low-temperature photoluminescence studies are reported on CdSe nanocrystals embedded in an SiOx thin film matrix. The main spectral feature for all samples and both temperatures is a broad band whose position does not change considerably with nanocrystallite size. The band is assigned to recombination through defect states, whose energy depends on the nanocrystallite size in such a way that they counter-balance the similar dependence of the optical band gap on the nanocrystallite size. A noticeable asymmetry on the low-energy side of this band at low temperatures is attributed to the existence of a variety of surface defect states and/or a large number of volume defect states in these nanocrystals. There is evidence to suggest that the energy band diagram of CdSe nanocrystals in SiOx matrix is considerably different from that of SiOx/CdSe multi-quantum wells. (C) 1999 Elsevier Science B.V. All rights reserved. |
en |
heal.publisher |
Elsevier Science Publishers B.V., Amsterdam, Netherlands |
en |
heal.journalName |
Journal of Luminescence |
en |
dc.identifier.doi |
10.1016/S0022-2313(99)00043-5 |
en |
dc.identifier.isi |
ISI:000081962700007 |
en |
dc.identifier.volume |
82 |
en |
dc.identifier.issue |
3 |
en |
dc.identifier.spage |
233 |
en |
dc.identifier.epage |
240 |
en |