Raman and RAS measurements on uniaxially strained thin semiconductor layers

Liarokapis, E; Papadimitriou, D; Rumberg, J; Richter, W

dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Rumberg, J	en
dc.contributor.author	Richter, W	en
dc.date.accessioned	2014-03-01T01:15:06Z
dc.date.available	2014-03-01T01:15:06Z
dc.date.issued	1999	en
dc.identifier.issn	0370-1972	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13343
dc.subject.classification	Physics, Condensed Matter	en
dc.title	Raman and RAS measurements on uniaxially strained thin semiconductor layers	en
heal.type	journalArticle	en
heal.identifier.primary	10.1002/(SICI)1521-3951(199901)211:1<309::AID-PSSB309>3.0.CO;2-W	en
heal.identifier.secondary	http://dx.doi.org/10.1002/(SICI)1521-3951(199901)211:1<309::AID-PSSB309>3.0.CO;2-W	en
heal.language	English	en
heal.publicationDate	1999	en
heal.abstract	A sensitive and reliable method was developed for the determination of electron and phonon deformation potentials of thin layers and layered structures. A device was constructed and used to apply a line force at the center of a narrow stripe cut from a semiconductor wafer. The induced strain along the stripe was calculated from the maximum deflection at the center of the stripe. Thin layers of Si, SiGe and InGaAs were studied and the information on the phonon deformation potentials was deduced from the phonon frequency shift measured by Raman spectroscopy. Strain dependent changes in electronic band structure were monitored by means of Reflectance Anisotropy Spectroscopy (RAS). The RAS spectra consisted of sharp peaks at or near bandgap energies which increased rapidly with even a small increase of strain. The uniaxial strain device used with RAS is shown to provide a very sensitive technique for the detection of small amounts of strain. This method could be also applied for the study of superlattices.	en
heal.publisher	WILEY-V C H VERLAG GMBH	en
heal.journalName	Physica Status Solidi (B) Basic Research	en
dc.identifier.doi	10.1002/(SICI)1521-3951(199901)211:1<309::AID-PSSB309>3.0.CO;2-W	en
dc.identifier.isi	ISI:000078185000048	en
dc.identifier.volume	211	en
dc.identifier.issue	1	en
dc.identifier.spage	309	en
dc.identifier.epage	316	en