Raman and X-ray photoelectron spectroscopy study of carbon nitride thin films

Petrov, P; Dimitrov, DB; Papadimitriou, D; Beshkov, G; Krastev, V; Georgiev, Ch

dc.contributor.author	Petrov, P	en
dc.contributor.author	Dimitrov, DB	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Beshkov, G	en
dc.contributor.author	Krastev, V	en
dc.contributor.author	Georgiev, Ch	en
dc.date.accessioned	2014-03-01T01:15:06Z
dc.date.available	2014-03-01T01:15:06Z
dc.date.issued	1999	en
dc.identifier.issn	0169-4332	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13344
dc.subject	carbon nitride	en
dc.subject	electron beam evaporation	en
dc.subject	ion bombardment	en
dc.subject	Raman	en
dc.subject	XPS	en
dc.subject.classification	Chemistry, Physical	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Chemical bonds	en
dc.subject.other	Crystal atomic structure	en
dc.subject.other	Crystal orientation	en
dc.subject.other	Deposition	en
dc.subject.other	Electron beams	en
dc.subject.other	Evaporation	en
dc.subject.other	Graphite	en
dc.subject.other	Ion bombardment	en
dc.subject.other	Nitrides	en
dc.subject.other	Nitrogen	en
dc.subject.other	Silicon wafers	en
dc.subject.other	Thin films	en
dc.subject.other	Carbon nitride	en
dc.subject.other	Electron beam evaporation	en
dc.subject.other	Amorphous films	en
dc.title	Raman and X-ray photoelectron spectroscopy study of carbon nitride thin films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0169-4332(99)00278-0	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0169-4332(99)00278-0	en
heal.language	English	en
heal.publicationDate	1999	en
heal.abstract	Carbon nitride thin films were deposited on Si(100) substrates by electron beam evaporation of graphite and simultaneous low energy nitrogen ion bombardment. They were analysed by Raman and X-ray photoelectron spectroscopy. The formed amorphous layers are tetrahedrally bonded and consist of sp(3) carbon bonds with one nitrogen atom among its nearest neighbours. Substitution of the tetrahedrally bonded carbon atom by nitrogen leads to decrease of the percentage weight of the nanocrystalline diamond phase and formation of a CN, phase embedded in the amorphous carbon layer. By changing the deposition conditions, redistribution of sp(2) and sp(3) bonded C-N occurs. (C) 1999 Published by Elsevier Science B.V. All rights reserved.	en
heal.publisher	Elsevier Science Publishers B.V., Amsterdam, Netherlands	en
heal.journalName	Applied Surface Science	en
dc.identifier.doi	10.1016/S0169-4332(99)00278-0	en
dc.identifier.isi	ISI:000083530600009	en
dc.identifier.volume	151	en
dc.identifier.issue	3	en
dc.identifier.spage	233	en
dc.identifier.epage	238	en