Raman linewidths of phonons in Si, Ge, and SiC under pressure

Ulrich, C; Debernardi, A; Anastassakis, E; Syassen, K; Cardona, M

dc.contributor.author	Ulrich, C	en
dc.contributor.author	Debernardi, A	en
dc.contributor.author	Anastassakis, E	en
dc.contributor.author	Syassen, K	en
dc.contributor.author	Cardona, M	en
dc.date.accessioned	2014-03-01T01:15:06Z
dc.date.available	2014-03-01T01:15:06Z
dc.date.issued	1999	en
dc.identifier.issn	0370-1972	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13345
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	FUNCTIONAL PERTURBATION-THEORY	en
dc.subject.other	DIELECTRIC-PROPERTIES	en
dc.subject.other	SILICON-CARBIDE	en
dc.subject.other	DEPENDENCE	en
dc.subject.other	SCATTERING	en
dc.subject.other	SEMICONDUCTORS	en
dc.subject.other	CALIBRATION	en
dc.title	Raman linewidths of phonons in Si, Ge, and SiC under pressure	en
heal.type	journalArticle	en
heal.identifier.primary	10.1002/(SICI)1521-3951(199901)211:1<293::AID-PSSB293>3.0.CO;2-O	en
heal.identifier.secondary	http://dx.doi.org/10.1002/(SICI)1521-3951(199901)211:1<293::AID-PSSB293>3.0.CO;2-O	en
heal.language	English	en
heal.publicationDate	1999	en
heal.abstract	We have investigated the pressure dependence of the lifetimes of zone-center optical phonons in Si, Ge, and 3C-SiC. The mechanism leading to a finite lifetime is the anharmonic decay into phonons of lower energy. Experimentally, the lifetime is determined from the full width at half maximum of Raman lines measured at low temperature. The experimental results for the linewidths as well as phonon frequencies are compared to results of ab-initio calculations which are based. on third-order density functional perturbation theory.	en
heal.publisher	WILEY-V C H VERLAG GMBH	en
heal.journalName	Physica Status Solidi (B) Basic Research	en
dc.identifier.doi	10.1002/(SICI)1521-3951(199901)211:1<293::AID-PSSB293>3.0.CO;2-O	en
dc.identifier.isi	ISI:000078185000046	en
dc.identifier.volume	211	en
dc.identifier.issue	1	en
dc.identifier.spage	293	en
dc.identifier.epage	300	en